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| 型号： | MR25H40CDF |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 10/19页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 4MBIT 40MHZ 8DFN |
| 标准包装： | 490 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 4M (512K x 8) |
| 速度： | 40MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP，小标志 (5x6) |
| 包装： | 托盘 |
| 其它名称： | 819-1040 |
MR25H40
3. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to avoid
application of any magnetic field more intense than the field intensity specified in the maximum ratings.
Table 3.1 Absolute Maximum Ratings 1
Parameter
Supply voltage 2
Voltage on any pin 2
Output current per pin
Package power dissipation 3
Temperature under bias
MR25H40C (Industrial)
Temperature under bias
MR25H40M (AEC-Q100 Grade 1)
Storage Temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
Maximum magnetic field during read or standby
Symbol
V DD
V IN
I OUT
P D
T BIAS
T BIAS
T stg
T Lead
H max_write
H max_read
Value
-0.5 to 4.0
-0.5 to V DD + 0.5
±20
0.600
-45 to 95
-45 to 135
-55 to 150
260
12,000
12,000
Unit
V
V
mA
W
°C
°C
°C
°C
A/m
A/m
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional opera-
All voltages are referenced to V SS . The DC value of V IN must not exceed actual applied V DD by more
Power dissipation capability depends on package characteristics and use environment.
1
tion should be restricted to recommended operating conditions. Exposure to excessive voltages or
magnetic fields could affect device reliability.
2
than 0.5V. The AC value of V IN must not exceed applied V DD by more than 2V for 10ns with I IN limited
to less than 20mA.
3
Everspin Technologies ? 2011
10
MR25H40 Rev. 5, 11/2011
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相关代理商/技术参数 |
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| MR25H40CDFR | 功能描述:NVRAM 4Mb 3.3V 512Kx8 SPI RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDC | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDCR | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDF | 功能描述:NVRAM 4Mb 3.3V 512Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDFR | 功能描述:NVRAM 4Mb 3.3V 512Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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