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参数资料
| 型号： | MR25H40CDF |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 6/19页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 4MBIT 40MHZ 8DFN |
| 标准包装： | 490 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 4M (512K x 8) |
| 速度： | 40MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP，小标志 (5x6) |
| 包装： | 托盘 |
| 其它名称： | 819-1040 |
SPI COMMUNICATIONS PROTOCOL
MR25H40
Write Enable (WREN)
The Write Enable (WREN) command sets the Write Enable Latch (WEL) bit in the status register (bit 1). The
Write Enable Latch must be set prior to writing either bit in the status register or the memory. The WREN
command is entered by driving CS low, sending the command code, and then driving CS high.
Figure 2.2 WREN
CS
Mode 3
0
1
2
3
4
5
6
7
Mode 3
SCK
Mode 0
Instruction (06h)
Mode 0
SI
0
0
0
0
0
1
1
0
SO
High Impedance
Write Disable (WRDI)
The Write Disable (WRDI) command resets the Write Enable Latch (WEL) bit in the status register (bit 7).
This prevents writes to status register or memory. The WRDI command is entered by driving CS low, send-
ing the command code, and then driving CS high.
The Write Enable Latch (WEL) is reset on power-up or when the WRDI command is completed.
CS
Figure 2.3 WRDI
Mode 3
0
1
2
3
4
5
6
7
Mode 3
SCK
Mode 0
Instruction (04h)
Mode 0
SI
0
0
0
0
0
1
0
0
SO
High Impedance
Write Status Register (WRSR)
The Write Status Register (WRSR) command allows new values to be written to the Status Register. The
WRSR command is not executed unless the Write Enable Latch (WEL) has been set to 1 by executing a
WREN command while pin WP and bit SRWD correspond to values that make the status register writable
as seen in table 2.3. Status Register bits are non-volatile with the exception of the WEL which is reset to 0
upon power cycling.
The WRSR command is entered by driving CS low, sending the command code and status register write
data byte, and then driving CS high.
Everspin Technologies ? 2011
6
MR25H40 Rev. 5, 11/2011
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR25H40CDFR | 功能描述:NVRAM 4Mb 3.3V 512Kx8 SPI RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDC | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDCR | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDF | 功能描述:NVRAM 4Mb 3.3V 512Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDFR | 功能描述:NVRAM 4Mb 3.3V 512Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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