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| 型号： | MR25H40CDF |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 5/19页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 4MBIT 40MHZ 8DFN |
| 标准包装： | 490 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 4M (512K x 8) |
| 速度： | 40MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP，小标志 (5x6) |
| 包装： | 托盘 |
| 其它名称： | 819-1040 |
SPI COMMUNICATIONS PROTOCOL
Table 2.3 Memory Protection Modes
MR25H40
WEL
0
1
1
1
SRWD
X
0
1
1
WP
X
X
Low
High
Protected Blocks
Protected
Protected
Protected
Protected
Unprotected Blocks
Protected
Writable
Writable
Writable
Status
Register
Protected
Writable
Protected
Writable
Table 2.4 Block Memory Write Protection
Status Register
Memory Contents
BP1
0
0
1
1
BP0
0
1
0
1
Protected Area
None
Upper Quarter
Upper Half
All
Unprotected Area
All Memory
Lower Three-Quarters
Lower Half
None
Block Protection
The memory enters hardware block protection when the WP input is low and the Status Register Write Dis-
able (SRWD) bit is set to 0. The memory leaves hardware block protection only when the WP pin goes high.
While WP is low, the write protection blocks for the memory are determined by the status register bits BP0
and BP1 and cannot be modified without taking the WP signal high again.
If the WP signal is high (independent of the status of SRWD bit), the memory is in software protection
mode. This means that block write protection is controlled solely by the status register BP0 and BP1 block
write protect bits and this information can be modified using the WRSR command.
Read Status Register (RDSR)
The Read Status Register (RDSR) command allows the Status Register to be read. The Status Register can
be read at any time to check the status of write enable latch bit, status register write protect bit, and block
write protect bits. For MR25H40, the write in progress bit (bit 0) is not written by the memory because
there is no write delay. The RDSR command is entered by driving CS low, sending the command code, and
then driving CS high.
Figure 2.1 RDSR
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Mode 3
SCK
Mode 0
SI
0
0
0
0
0
1
0
1
MSB
Status Register Out
SO
High Impedance
7
6
5
4
3
2
1
0
High Z
MSB
Everspin Technologies ? 2011
5
MR25H40 Rev. 5, 11/2011
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| MR25H40CDFR | 功能描述:NVRAM 4Mb 3.3V 512Kx8 SPI RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDC | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDCR | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDF | 功能描述:NVRAM 4Mb 3.3V 512Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H40MDFR | 功能描述:NVRAM 4Mb 3.3V 512Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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