参数资料
型号: MRF5S21100HSR5
厂商: Freescale Semiconductor
文件页数: 10/10页
文件大小: 641K
描述: MOSFET RF N-CHAN 28V 23W NI-780S
标准包装: 50
晶体管类型: LDMOS
频率: 2.11GHz
增益: 13.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.05A
功率 - 输出: 23W
电压 - 额定: 65V
封装/外壳: NI-780S
供应商设备封装: NI-780S
包装: 带卷 (TR)
AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
MRF5S21100HR3 MRF5S21100HSR3
9
RF Device Data
Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
4
Dec. 2010
?
Data sheet revised to reflect part status change,
p. 1, including use of applicable overlay.
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
?
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
?
Added Revision History, p. 9
?
Data sheet archived. Parts no longer manufactured.
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相关代理商/技术参数
参数描述
MRF5S21100LR3 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21100LSR3 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130HR3 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21130HR5 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray