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参数资料
| 型号： | MRF5S21100HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 641K |
| 描述： | MOSFET RF N-CHAN 28V 23W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.05A |
| 功率 - 输出： | 23W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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HIVE INF
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RCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
0.5
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 250
μAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS
=28Vdc,ID
= 1050 mAdc)
VGS(Q)
?
3.8
?
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=2.5Adc)
VDS(on)
?
0.24
0.3
Vdc
Forward Transconductance
(VDS
=10Vdc,ID
=2.5Adc)
gfs
?
6
?
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=28Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
2.14
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1050 mA, Pout
= 23 W Avg., f1 = 2157.5 MHz, f2 =
2167.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @
±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
13.5
?
dB
Drain Efficiency
ηD
24
26
?
%
Intermodulation Distortion
IM3
?
-- 3 7
-- 3 5
dBc
Adjacent Channel Power Ratio
ACPR
?
-- 4 0
-- 3 8
dBc
Input Return Loss
IRL
?
-- 1 6
-- 9
dB
1. Part is internally matched both on input and output.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21100LR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100LSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21130HR5 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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