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| 型号： | MRF5S21100HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 641K |
| 描述： | MOSFET RF N-CHAN 28V 23W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.05A |
| 功率 - 输出： | 23W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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MRF5S21100HR3 MRF5S21100HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF5S21100HR3(SR3) Test Circuit Schematic
R2
VBIAS
VSUPPLY
C11
C8
C7
C5
C14
C1
C3
C10
RF
OUTPUT
RF
INPUT
R1
Z1 Z2 Z3 Z4 Z5 Z6
Z7
Z9
Z8
Z16
Z10 Z11 Z12 Z15 Z17Z13
Z14
+
Z10 0.368″
x 1.136″
Microstrip
Z11 0.151″
x 0.393″
Microstrip
Z12 0.280″
x 0.220″
Microstrip
Z13 0.481″
x 0.142″
Microstrip
Z14 0.138″
x 0.080″
Microstrip
Z15 0.344″
x 0.080″
Microstrip
Z16 0.147″
x 0.099″
Microstrip
Z17 0.859″
x 0.080″
Microstrip
PCB Arlon GX--0300--SS--22, 0.030″,
εr
=2.55
Z1 0.674″
x 0.080″
Microstrip
Z2 0.421″
x 0.080″
Microstrip
Z3 0.140″
x 0.080″
Microstrip
Z4 1.031″
x 0.080″
Microstrip
Z5 0.380″
x 0.643″
Microstrip
Z6 0.080″
x 0.643″
Microstrip
Z7 0.927″
x 0.048″
Microstrip
Z8 0.620″
x 0.048″
Microstrip
Z9 0.079″
x 1.136″
Microstrip
DUT
B1
R3
C4
C13
C15
C2
C6
W1
R4
C12
+
C9
Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair--Rite
C1, C2
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C3
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C4
0.1
μF Chip Capacitor
C1210C104J5RAC
Kemet
C5, C7
7.5 pF Chip Capacitors
ATC100B7R5JT500XT
ATC
C6
1.2 pF Chip Capacitor
ATC100B1R2BT500XT
ATC
C8
1K pF Chip Capacitor
ATC100B102JT500XT
ATC
C9, C10
0.56
μF Chip Capacitors
C1825C564J5RAC
Kemet
C11
470
μF, 63 V Electrolytic Capacitor
EKME630ELL471MK25S
Multicomp
C12
100
μF, 50 V Electrolytic Capacitor
MCHT101M1HB--1017--RH
Multicomp
C13
0.6--4.5 pF Gigatrim Variable Capacitor
27271SL
Johanson
C14
2.7 pF Chip Capacitor
ATC100B2R7CT500XT
ATC
C15
0.4--2.5 pF Gigatrim Variable Capacitor
27271SL
Johanson
R1
1kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 kΩ, 1/4 W Chip Resistor
CRCW12065600FKEA
Vishay
R3, R4
12
Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
相关PDF资料 |
PDF描述 |
|---|---|
| MRF5S21130HSR5 | MOSFET RF N-CHAN 28V 28W NI-880S |
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| MRF5S4140HSR5 | MOSFET RF N-CHAN 28V 28W NI-780S |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S21100LR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21100LSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130HR3 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S21130HR5 | 功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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