参数资料
型号: MRF6P3300HR5
厂商: Freescale Semiconductor
文件页数: 10/24页
文件大小: 993K
描述: MOSFET RF N-CH 32V 300W NI-860C3
标准包装: 50
晶体管类型: LDMOS
频率: 857MHz
增益: 20.2dB
电压 - 测试: 32V
额定电流: 10µA
电流 - 测试: 1.6A
功率 - 输出: 320W
电压 - 额定: 68V
封装/外壳: NI-860C3
供应商设备封装: NI-860C3
包装: 带卷 (TR)
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
18
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
TYPICAL CW BROADBAND CHARACTERISTICS
Figure 43. Pulsed CW Output Power versus
Input Power @ 470 MHz
33
57
29
Pin, INPUT POWER (dBm)
VDD
= 32 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 470 MHz
51
29.5 30.5 31.5 32.530 31 32
Actual
Ideal
56.5
28
P
out
, OUTPUT POWER (dBm)
55
54
53
52
28.5
P1dB = 53.59 dBm
(228.67 W)
56
55.5
54.5
53.5
52.5
51.5
Figure 44. Pulsed CW Output Power versus
Input Power @ 560 MHz
36
59
30
Pin, INPUT POWER (dBm)
VDD
= 32 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 560 MHz
53
31 32 3433 35
Actual
Ideal
29
P
out
, OUTPUT POWER (dBm)
58
57
55
54
P1dB = 54.84 dBm
(304.81 W)
56
P3dB = 55.49 dBm
(353.76 W)
Figure 45. Pulsed CW Output Power versus
Input Power @ 660 MHz
38
60
Pin, INPUT POWER (dBm)
VDD
= 32 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 660 MHz
51
31 32 3433 35
Actual
Ideal
30
P
out
, OUTPUT POWER (dBm)
58
57
55
54
P1dB = 54.04 dBm
(253.67 W)
56
P3dB = 54.88 dBm
(307.45 W)
59
53
52
36 37
Figure 46. Pulsed CW Output Power versus
Input Power @ 760 MHz
39
60
Pin, INPUT POWER (dBm)
VDD
= 32 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 760 MHz
51
32 33 3534 36
Actual
Ideal
31
P
out
, OUTPUT POWER (dBm)
58
57
55
54
P1dB = 54.56 dBm
(286.06 W)
56
P3dB = 55.25 dBm
(334.73 W)
59
53
52
37 38
Figure 47. Pulsed CW Output Power versus
Input Power @ 860 MHz
40
60
Pin, INPUT POWER (dBm)
VDD
= 32 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 860 MHz
52
33 34 3635 37
Actual
Ideal
32
P
out
, OUTPUT POWER (dBm)
58
57
55
54
P1dB = 54.82 dBm
(303.25 W)
56
P3dB = 55.58 dBm
(361.21 W)
59
53
38 39
相关PDF资料
PDF描述
MRF6P9220HR5 MOSFET RF N-CH 28V 47W NI-860C3
MRF6S18060NBR1 MOSFET RF N-CH 26V 60W TO272-4
MRF6S18100NR1 MOSFET RF N-CH 28V 100W TO2704
MRF6S18140HSR5 MOSFET RF N-CH 28V ESD NI880S
MRF6S19060GNR1 MOSFET RF N-CH 28V TO-270-2 GW
相关代理商/技术参数
参数描述
MRF6P9220HR3 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P9220HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR5 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S18060MBR1 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs