参数资料
型号: MRF6P3300HR5
厂商: Freescale Semiconductor
文件页数: 8/24页
文件大小: 993K
描述: MOSFET RF N-CH 32V 300W NI-860C3
标准包装: 50
晶体管类型: LDMOS
频率: 857MHz
增益: 20.2dB
电压 - 测试: 32V
额定电流: 10µA
电流 - 测试: 1.6A
功率 - 输出: 320W
电压 - 额定: 68V
封装/外壳: NI-860C3
供应商设备封装: NI-860C3
包装: 带卷 (TR)
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
16
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
TYPICAL DVB-T OFDM BROADBAND CHARACTERISTICS
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 37. Single-Carrier OFDM Broadband
Performance @ 60 Watts Avg.
18 -5864 QAM Data Carrier Modulation, 5 Symbols
f, FREQUENCY (MHz)
30
-52
24
20
-53
-54
-57
400
-56
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
Gps
ACPR
28
900
26
22
-55
ηD
500 600 700 800
Figure 38. Single-Carrier DVB-T OFDM Power
Gain versus Output Power
18
24
3
f = 560 MHz
Pout, OUTPUT POWER (WATTS) AVG.
23
21
20
100 200
G
ps
, POWER GAIN (dB)
22
19
10
660 MHz
VDD
= 32 Vdc, I
DQ
= 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
760 MHz
860 MHz
η
D
,
DRAIN EFFICIENCY (%)
Figure 39. Single-Carrier DVB-T OFDM Drain
Efficiency versus Output Power
5
45
3
Pout, OUTPUT POWER (WATTS) AVG.
40
30
25
100 200
35
20
10
VDD
= 32 Vdc, I
DQ
= 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
15
10
f = 660 MHz
560 MHz
760 MHz
860 MHz
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 40. Single-Carrier DVB-T OFDM ACPR
versus Output Power
-65
-45
3
Pout, OUTPUT POWER (WATTS) AVG.
-50
100 200
-55
10
VDD
= 32 Vdc, I
DQ
= 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
-60
f = 860 MHz
560 MHz
760 MHz
660 MHz
VDD= 32 Vdc, Pout
= 60 W (Avg.)
IDQ
= 1600 mA, 8K Mode OFDM
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