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参数资料
| 型号： | MRF6P3300HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 16/24页 |
| 文件大小： | 993K |
| 描述： | MOSFET RF N-CH 32V 300W NI-860C3 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 857MHz |
| 增益： | 20.2dB |
| 电压 - 测试： | 32V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.6A |
| 功率 - 输出： | 320W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-860C3 |
| 供应商设备封装： | NI-860C3 |
| 包装： | 带卷 (TR) |
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MRF6P3300HR3 MRF6P3300HR5
23
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Oct. 2008
?
Listed replacement part and Device Migration notification reference number, p. 1
?
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
?
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
?
Corrected VDS
to V
DD
in the RF test condition voltage callout for V
GS(Q), On Characteristics table, p. 2
?
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
?
Corrected Z list in Figs. 1, 19, Test Circuit Schematic, p. 3, 10
?
Updated PCB information to show more specific material details, Figs. 1, 19, Test Circuit Schematic, p. 3,
10
?
Updated Part Numbers in Tables 5, 6, Component Designations and Values, to latest RoHS compliant
part numbers, p. 3, 11
?
Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
?
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 7
?
Adjusted scale for Figs. 22-26, Two-Tone Power Gain versus Output Power, and Figs. 27-31, Third
Order Intermodulation Distortion versus Output Power, to show wider dynamic range, p. 13, 14
?
Added Product Documentation and Revision History, p. 23
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6P9220HR5 | MOSFET RF N-CH 28V 47W NI-860C3 |
| MRF6S18060NBR1 | MOSFET RF N-CH 26V 60W TO272-4 |
| MRF6S18100NR1 | MOSFET RF N-CH 28V 100W TO2704 |
| MRF6S18140HSR5 | MOSFET RF N-CH 28V ESD NI880S |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P9220HR3 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR5 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S18060MBR1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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