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| 型号： | MRF6P3300HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/24页 |
| 文件大小： | 993K |
| 描述： | MOSFET RF N-CH 32V 300W NI-860C3 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 857MHz |
| 增益： | 20.2dB |
| 电压 - 测试： | 32V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.6A |
| 功率 - 输出： | 320W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-860C3 |
| 供应商设备封装： | NI-860C3 |
| 包装： | 带卷 (TR) |
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MRF6P3300HR3 MRF6P3300HR5
15
RF Device Data
Freescale Semiconductor
TYPICAL TWO-TONE BROADBAND CHARACTERISTICS
Figure 32. Intermodulation Distortion
Products versus Tone Spacing @ 470 MHz
1 10010
-60
0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 32 Vdc, P
out
= 270 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements
f1 = 470 MHz, f2 = 470 MHz + Tone Spacing
5th Order
3rd Order
-10
-20
-40
-50
IMD, INTERMODULATION DISTORTION (dBc)
-30
Figure 33. Intermodulation Distortion
Products versus Tone Spacing @ 560 MHz
1 10010
-60
0
0.01
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 32 Vdc, P
out
= 270 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements, f = 560 MHz
5th Order
3rd Order
-10
-20
-40
-50
IMD, INTERMODULATION DISTORTION (dBc)
-30
0.1
Figure 34. Intermodulation Distortion
Products versus Tone Spacing @ 660 MHz
1 10010
-60
0
0.01
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 32 Vdc, P
out
= 270 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements, f = 660 MHz
5th Order
3rd Order
-10
-20
-40
-50
IMD, INTERMODULATION DISTORTION (dBc)
-30
0.1
Figure 35. Intermodulation Distortion
Products versus Tone Spacing @ 760 MHz
1 10010
-60
0
0.01
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 32 Vdc, P
out
= 270 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements, f = 760 MHz
5th Order
3rd Order
-10
-20
-40
-50
IMD, INTERMODULATION DISTORTION (dBc)
-30
0.1
Figure 36. Intermodulation Distortion
Products versus Tone Spacing @ 860 MHz
1 10010
-60
0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 32 Vdc, P
out
= 270 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements, 6 MHz Tone Spacing
f1 = 860 MHz - Tone Spacing, f2 = 860 MHz
5th Order
3rd Order
-10
-20
-40
-50
IMD, INTERMODULATION DISTORTION (dBc)
-30
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| MRF6P9220HR3 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P9220HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR5 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S18060MBR1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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