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参数资料
| 型号： | MRF6VP11KHR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/13页 |
| 文件大小： | 806K |
| 描述： | MOSFET RF N-CH 1000W NI1230 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 130MHz |
| 增益： | 26dB |
| 电压 - 测试： | 50V |
| 额定电流： | 5mA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 1000W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
12
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP11KHR6 MRF6VP11KGSR5
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
?
Initial Release of Data Sheet
1
Apr. 2008
?
Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS
compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3.
?
Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
2
July 2008
?
Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6
3
Sept. 2008
?
Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
measured separately, p. 5
?
Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
?
Corrected Fig. 13, MTTF versus Junction Temperature ? CW, to reflect the correct die size and increased
the MTTF factor accordingly, p. 6
?
Corrected Fig. 14, MTTF versus Junction Temperature ? Pulsed, to reflect the correct die size and
increased the MTTF factor accordingly, p. 6
4
Dec. 2008
?
Fig. 15, Series Equivalent Source and Load Impedance, corrected Zsource
copy to read ?Test circuit
impedance as measured from gate to gate, balanced configuration? and Zload
copy to read ?Test circuit
impedance as measured from drain to drain, balanced configuration?, p. 7
5
July 2009
?
Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1
?
Changed ?EKME630ELL471MK25S? part number
to ?MCGPR63V477M13X26--RH?, changed R1
Description from ?1 K?, 1/4 W Axial Leaded Resistor? to ?1 K?, 1/4 W Carbon Leaded Resistor? and
?CMF601000R0FKEK? part number to ?MCCFR0W4J0102A50?, Table 5, Test Circuit Component
Designations and Values, p. 3
?
Corrected Fig. 13, MTTF versus Junction Temperature ? CW, to reflect change in Drain Efficiency from
70% to 72%, p. 6
?
Added Electromigration MTTF Calculator and RF High
Power Model availability to Product Documentation,
Tools and Software, p. 20
6
Dec. 2009
?
Device frequency range improved from 10--150 MHz to 1.8--150 MHz, p. 1
?
Reporting of pulsed thermal data now shown using the ZθJC
symbol, Table 2. Thermal Characteristics, p. 1
7
Apr. 2010
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
8
Sept. 2012
?
Added part number MRF6VP11KGSR5, p. 1
?
Added 2282--02 (NI--1230S--4 Gull) package isometric, p. 1, and Mechanical Outline, p. 10, 11
?
Table 3, ESD Protection Characteristics: added the device?s ESD passing level as applicable to each ESD
class, p. 2
?
Modified figure titles and/or graph axes
labels to clarify application use, p. 5, 6
?
Fig. 12, Transient Thermal Impedance: graph
updated to show correct CW operation, p. 6
?
Fig. 13, MTTF versus Junction Temperature ? CW:
MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 6
?
Fig. 14, MTTF versus Junction Temperature -- Pulsed removed, p. 6. Refer to the device?s MTTF
Calculator available at freescale.com/RFpower. Select Software & Tools/Development Tools/Calculators to
access MTTF calculators by product.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP11KHR6_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6VP121KHR5 | 制造商:Freescale Semiconductor 功能描述: 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230H - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHR6 | 功能描述:射频MOSFET电源晶体管 VHV6 1kW 50V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP121KHSR5 | 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230HS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 965-1215 MHZ, 1 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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