参数资料
型号: MRF6VP11KHR6
厂商: Freescale Semiconductor
文件页数: 5/13页
文件大小: 806K
描述: MOSFET RF N-CH 1000W NI1230
标准包装: 150
晶体管类型: LDMOS(双)
频率: 130MHz
增益: 26dB
电压 - 测试: 50V
额定电流: 5mA
电流 - 测试: 150mA
功率 - 输出: 1000W
电压 - 额定: 110V
封装/外壳: NI-1230
供应商设备封装: NI-1230
包装: 带卷 (TR)
MRF6VP11KHR6 MRF6VP11KGSR5
13
RF Device DataDocument Number: MRF6VP11KHRev. 8, 9/2012
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MRF6VP121KHSR5 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230HS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 965-1215 MHZ, 1 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS
MRF6VP121KHSR6 功能描述:射频MOSFET电源晶体管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray