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参数资料
| 型号： | MRF6VP11KHR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/13页 |
| 文件大小： | 806K |
| 描述： | MOSFET RF N-CH 1000W NI1230 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 130MHz |
| 增益： | 26dB |
| 电压 - 测试： | 50V |
| 额定电流： | 5mA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 1000W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
MRF6VP11KHR6 MRF6VP11KGSR5
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
50
1
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
10
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
1
100
1
TC
=25°C
10
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
100
TJ
= 200°C
TJ
= 175°C
TJ
= 150°C
27
10
10
80
100
25
23
21
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
24
22
20
1000 2000
Gps
20
56
65
30
63
62
61
Pin, INPUT POWER (dBm) PEAK
Figure 7. Output Power versus Input Power
64
60
39
59
26
58
57
31 32 33 34 35 36 37 38
P
out
, OUTPUT POWER (dBm)
P3dB = 61.23 dBm (1327.39 W)
Actual
Ideal
P1dB = 60.57 dBm (1140.24 W)
16
32
10
28
24
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
100
20
IDQ
= 6000 mA
1000 2000
3600 mA
1500 mA
150 mA
375 mA
750 mA
Figure 9. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEAK
G
ps
, POWER GAIN (dB)
VDD
=30V
12
28
0
16
24
35 V
20
45 V
200 400 600 800 1000 1200 1400
1600
50 V
40 V
VDD
=50Vdc,IDQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
VDD
=50Vdc,IDQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
VDD
= 50 Vdc, f = 130 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
IDQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
Note:
Each side of device measured separately.
Note:
Each side of device measured separately.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP11KHR6_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6VP121KHR5 | 制造商:Freescale Semiconductor 功能描述: 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230H - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHR6 | 功能描述:射频MOSFET电源晶体管 VHV6 1kW 50V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP121KHSR5 | 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230HS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 965-1215 MHZ, 1 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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