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| 型号： | MRF6VP11KHR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/13页 |
| 文件大小： | 806K |
| 描述： | MOSFET RF N-CH 1000W NI1230 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 130MHz |
| 增益： | 26dB |
| 电压 - 测试： | 50V |
| 额定电流： | 5mA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 1000W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
MRF6VP11KHR6 MRF6VP11KGSR5
3
RF Device Data
Freescale Semiconductor, Inc.
Figure 2. MRF6VP11KHR6 Test Circuit Schematic
Z12, Z13 0.206″
x 0.253″
Microstrip
Z14, Z15 0.116″
x 0.253″
Microstrip
Z16*, Z17* 0.035″
x 0.253″
Microstrip
Z18 0.275″
x 0.082″
Microstrip
Z19 0.845″
x 0.082″
Microstrip
*Line length includes microstrip bends.
Z1 0.175″
x 0.082″
Microstrip
Z2* 1.461″
x 0.082″
Microstrip
Z3* 0.080″
x 0.082″
Microstrip
Z4, Z5 0.133″
x 0.193″
Microstrip
Z6, Z7, Z8, Z9 0.500″
x 0.518″
Microstrip
Z10, Z11 0.102″
x 0.253″
Microstrip
VBIAS
C2
+
VSUPPLY
+
C1
C3
+
B1
R1
C4
C5
C6
C7
C8
C9
C10
L1
C11
INPUT
Z1
RF
L2
Z2
C12
Z3
Z4
Z6
Z5
Z7
Z8
C21
Z10
Z9
C22
Z11
C23
Z12
Z13
C24
Z14
Z15
C25
Z16
Z17
RF
Z19
OUTPUT
C26
Z18
+
C20
+
C17
C18
C19
+
C15
C16
C13
C14
L3
R2
T1 T2
DUT
J1
J2
Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
95
?, 100 MHz Long Ferrite Bead
2743021447
Fair--Rite
C1
47
μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Cap
C2
22
μF, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C3
10
μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C4, C9, C17
10K pF Chip Capacitors
ATC200B103KT50XT
ATC
C5, C16
20K pF Chip Capacitors
ATC200B203KT50XT
ATC
C6, C15
0.1
μF, 50 V Chip Capacitors
CDR33BX104AKYS
Kemet
C7
2.2
μF, 50 V Chip Capacitor
C1825C225J5RAC
Kemet
C8
0.22
μF, 100 V Chip Capacitor
C1825C223K1GAC
Kemet
C10, C11, C13, C14
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C12
18 pF Chip Capacitor
ATC100B180JT500XT
ATC
C18, C19, C20
470
μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C21, C22
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C23
75 pF Chip Capacitor
ATC100B750JT500XT
ATC
C24, C25
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C26
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
J1, J2
Jumpers from PCB to T1 and T2
Copper Foil
L1
82 nH Inductor
1812SMS--82NJLC
CoilCraft
L2
47 nH Inductor
1812SMS--47NJLC
CoilCraft
L3*
10 Turn, 18 AWG Inductor, Hand Wound
Copper Wire
R1
1K?, 1/4 W Carbon Leaded Resistor
MCCFR0W4J0102A50
Multicomp
R2
20
?, 3 W Chip Resistor
CPF320R000FKE14
Vishay
T1
Balun
TUI--9
Comm Concepts
T2
Balun
TUO--4
Comm Concepts
PCB
0.030″,
εr
=2.55
CuClad 250GX--0300--55--22
Arlon
*L3 is wrapped around R2.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP11KHR6_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6VP121KHR5 | 制造商:Freescale Semiconductor 功能描述: 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230H - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHR6 | 功能描述:射频MOSFET电源晶体管 VHV6 1kW 50V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP121KHSR5 | 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230HS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 965-1215 MHZ, 1 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS |
| MRF6VP121KHSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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