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| 型号： | MRF6VP3450HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 11/18页 |
| 文件大小： | 1077K |
| 描述： | MOSFET RF N-CH 450W NI-1230 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 860MHz |
| 增益： | 22.5dB |
| 电压 - 测试： | 50V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 90W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 标准包装 |
| 其它名称： | MRF6VP3450HR6DKR |
2
RF Device Data
Freescale Semiconductor
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 44°C, 450 W CW
Case Temperature 62°C, 450 W Pulsed, 50
μsec Pulse Width, 2.5% Duty Cycle
RθJC
ZθJC
0.27
0.25
0.04
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(3)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
10
μAdc
Drain--Source Breakdown Voltage
(ID
=50mA,VGS
=0Vdc)
V(BR)DSS
110
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(3)
(VDS
=10Vdc,ID
= 320
μAdc)
VGS(th)
1
1.6
2.5
Vdc
Gate Quiescent Voltage
(4)
(VDD
=50Vdc,ID
= 1400 mAdc, Measured in Functional Test)
VGS(Q)
2
2.6
3.5
Vdc
Drain--Source On--Voltage
(3)
(VGS
=10Vdc,ID
=1.58Adc)
VDS(on)
?
0.25
?
Vdc
Dynamic Characteristics
(3,5)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
0.92
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
54.5
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
373
?
pF
Functional Tests
(4)
(In Freescale Broadband Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 1400 mA, Pout
= 90 W Avg., f = 860 MHz,
DVB--T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @
±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.5
22.5
24.5
dB
Drain Efficiency
ηD
26
28
?
%
Adjacent Channel Power Ratio
ACPR
?
-- 6 2
-- 5 9
dBc
Input Return Loss
IRL
?
-- 4
-- 2
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
5. Part internally input matched.
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP3450HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6VP3450HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3450HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP41KH | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6VP41KHR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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