参数资料
型号: MRF6VP3450HR6
厂商: Freescale Semiconductor
文件页数: 17/18页
文件大小: 1077K
描述: MOSFET RF N-CH 450W NI-1230
产品培训模块: RF Broadcast Solutions
标准包装: 1
晶体管类型: LDMOS(双)
频率: 860MHz
增益: 22.5dB
电压 - 测试: 50V
额定电流: 10µA
电流 - 测试: 1.4A
功率 - 输出: 90W
电压 - 额定: 110V
封装/外壳: NI-1230
供应商设备封装: NI-1230
包装: 标准包装
其它名称: MRF6VP3450HR6DKR
8
RF Device Data
Freescale Semiconductor
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
TYPICAL CHARACTERISTICS ? TWO--TONE
Figure 10. Intermodulation Distortion
Products versus Output Power
-- 8 0
-- 2 0
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
VDD
=50Vdc,IDQ
= 1400 mA, f1 = 854 MHz
f2 = 860 MHz, Two--Tone Measurements
3rd Order
-- 4 0
-- 5 0
-- 6 0
100 1000
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 7 0
5th Order
5
Figure 11. Intermodulation Distortion
Products versus Tone Spacing
16010
-- 1 0
0.1
7th Order
TWO--TONE SPACING (MHz)
5th Order
3rd Order
-- 3 0
-- 4 0
-- 5 0
IMD, INTERMODULATIO
N DISTORTION (dBc)
Figure 12. Two--Tone Power Gain versus
Output Power
21
23
50
IDQ
= 1400 mA
Pout, OUTPUT POWER (WATTS) PEP
22.6
21.4
500
G
ps
, POWER GAIN (dB)
22.2
21.8
1250 mA
VDD
= 50 Vdc, f1 = 859.9 MHz, f2 = 860 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
Figure 13. Third Order Intermodulation
Distortion versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
-- 2 5
-- 3 0
-- 4 0
-- 4 5
-- 5 0
INTERMODULATION D
ISTORTION (dBc)
IMD, THIRD ORDER
-- 2 0
VDD
= 50 Vdc, f1 = 859.9 MHz, f2 = 860 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
500
50
-- 7 0
-- 2 0
VDD
=50Vdc,Pout
= 450 W (PEP), IDQ
= 1400 mA
Two--Tone Measurements
IDQ
= 700 mA
975 mA
1075 mA
-- 3 5
-- 3 0
-- 6 0
22.8
22.4
22
21.6
21.2
700 mA
975 mA
1075 mA
1250 mA
1400 mA
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