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| 型号： | MRF6VP3450HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/18页 |
| 文件大小： | 1077K |
| 描述： | MOSFET RF N-CH 450W NI-1230 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 860MHz |
| 增益： | 22.5dB |
| 电压 - 测试： | 50V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 90W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 标准包装 |
| 其它名称： | MRF6VP3450HR6DKR |
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
17
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2008
?
Initial Release of Data Sheet
1
Aug. 2008
?
Corrected component designation part number for C34, 35 in Table 5. Test Circuit Component Designation
and Values, p. 5
?
Added Note to Fig. 4, Capacitance versus Drain--Source Voltage and Fig. 5, DC Safe Operating Area to
denote that each side of device is measured separately, p. 7
?
Adjusted imaginary component signs in Fig. 24, Series Equivalent Source and Load Impedance data table
and replotted data, p. 12
2
Sept. 2008
?
Fig. 24, Series Equivalent Source and Load Impedance, corrected Zsource
copy to read ?Test circuit
impedance as measured from gate to gate, balanced configuration? and Zload
copy to read ?Test circuit
impedance as measured from gate to gate,
balanced configuration?, p. 12
2.1
Nov. 2008
?
Corrected Fig. 24 Revision History Zload
copy to read ?Test circuit impedance as measured from drain to
drain, balanced configuration?, p. 12
3
July 2009
?
Added capability of handling 10:1 VSWR @ 50 Vdc, 850 MHz, 450 Watts CW, p. 1
?
Added thermal resistance at 450 W CW,
Thermal Characteristics table, p. 2
?
Corrected Fig. 23, MTTF versus Junction Temperature, to match values given by the MRF6VP3450H/HS
MTTF calculator, p. 11
?
Added Electromigration MTTF Calculator and RF High
Power Model availability to Product Software, p. 17
4
Apr. 2010
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
?
Reporting of pulsed thermal data now shown using the ZθJC
symbol,p.2
?
Fig. 2, Test Circuit Schematic, Z--list, corrected Z4, Z5 from 1.400″
x 0.590″
Microstrip to 1.400″
x 0.059″
Microstrip,p.4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP3450HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6VP3450HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3450HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP41KH | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6VP41KHR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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