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| 型号： | MRF7S21170HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/17页 |
| 文件大小： | 447K |
| 描述： | IC MOSFET RF N-CHAN NI-880S |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 16dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 50W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
MRF7S21170HR3 MRF7S21170HSR3
15
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2006
?
Initial Release of Data Sheet
1
June 2006
?
Added Class C to description of parts, pg. 1
?
Changeded “?” to “--” in the Device Output Signal Par bullet, pg. 1
?
Changed typ value from
?9 to 18 in Part--to--Part Phase Variation characteristic description in Table 4, Typical
Performances, p. 2
?
Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7
2
Aug. 2006
?
Added Greater Negative Source bullet to Features section, p. 1
?
Corrected Fig. 14, Single--Carrier W--CDMA Spectrum, to 3.84 MHz, p. 7
3
Sept. 2006
?
Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1
?
Added “Insertion” to Part--to--Part Phase Variation characteristic description in Table 4, Typical Performances,
p. 2
?
Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical
Performances, p. 2
?
Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value
from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1, Test Circuit Schematic, p. 3
?
Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations
and Values, p. 3
?
Added Figure 10, Digital Predistortion Correction, p. 6
?
Corrected Fig. 15, Single--Carrier W--CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7
?
Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9
?
Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9
4
May 2007
?
Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard, p. 1
?
Added “Optimized for Doherty Applications” bullet to Features section, p. 1
?
Operating Junction Temperature increased from 200?C to 225?C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
?
Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for VGS(Q),
and added Fixture Gate Quiescent Voltage, VGG(Q)
to On Characteristics table, p. 2
?
Updated verbiage in Typical Performances table, p. 3
?
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers
and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4
?
Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 7
?
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location
of MTTF calculator for device, p. 8
?
Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50%
Clipping, Single--Carrier Test Signal, updated
to include output power level at functional test, p. 8
(continued)
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| MRF7S21210HR3 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21210HR5 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21210HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21210HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S27130HR3 | 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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