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参数资料
| 型号： | MRF7S21170HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/17页 |
| 文件大小： | 447K |
| 描述： | IC MOSFET RF N-CHAN NI-880S |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 16dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 50W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
16
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
REVISION HISTORY (continued)
Revision
Date
Description
5
Apr. 2008
?
Corrected On Characteristics table ID
value for VGS(th)
from 270
?Adc to 372
?Adc and VDS(on)
from
2.7 Adc to 3.72 Adc; tightened VGS(th)
minimum and maximum values to match production
test values, p. 2
?
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
?
Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single--Carrier Test
Signal, to better represent
production test signal, p. 8
6
Mar. 2011
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
?
Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
?
Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
?
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 15
7
Feb. 2012
?
Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be
used as a guideline when handling ESD sensitive
devices, p. 2.
?
Replaced Case Outline 465B--03, Issue D, with 465B--04, Issue F, p. 1, 11--12. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension K in mm from 4.44--5.21 to 4.45--5.21, changed
dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to
22.12--22.58, changed dimension Q in mm from 3--3.51 to 3.00--3.51, changed dimension R and S in mm
from 13.1--13.3 to 13.08--13.34.
?
Replaced Case Outline 465C--02, Issue D, with 465C--03, Issue E, p. 1, 13--14. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed
dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension R and S in mm from 13.1--13.3 to
13.08--13.34.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S21210HR3 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21210HR5 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21210HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S21210HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S27130HR3 | 功能描述:射频MOSFET电源晶体管 HV7 2.7GHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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