参数资料
型号: MRF8P20100HSR3
厂商: Freescale Semiconductor
文件页数: 21/22页
文件大小: 1196K
描述: FET RF N-CH 2025MHZ 28V NI780H-4
标准包装: 250
晶体管类型: LDMOS(双)
频率: 2.03GHz
增益: 16dB
电压 - 测试: 28V
电流 - 测试: 400mA
功率 - 输出: 20W
电压 - 额定: 65V
封装/外壳: NI-780HS-4
供应商设备封装: NI-780HS-4
包装: 带卷 (TR)
8
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
VDD
=28Vdc,IDQA
= 400 mA, VGSB
=1.3Vdc,Pout
=20WAvg.
f
MHz
Zsource
?
Zload
?
1880
3.23 -- j10.1
6.35 -- j5.32
1900
3.36 -- j9.78
6.64 -- j5.29
1920
3.42 -- j9.61
6.86 -- j5.42
1940
3.33 -- j9.44
6.94 -- j5.64
1960
3.22 -- j9.16
6.99 -- j5.82
1980
3.31 -- j8.90
7.17 -- j6.03
2000
3.48 -- j8.87
7.33 -- j6.46
2020
3.39 -- j8.92
7.10 -- j6.92
2040
3.13 -- j8.58
6.64 -- j6.97
Note: Measured with Peaking side open.
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 11. Series Equivalent Source and Load Impedance ? Carrier Side
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
VDD
=28Vdc,IDQA
= 400 mA, VGSB
=1.3Vdc,Pout
=20WAvg.
f
MHz
Zsource
?
Zload
?
1880
3.83 -- j10.28
0.67 -- j7.03
1900
3.88 -- j10.00
0.68 -- j6.71
1920
3.82 -- j9.81
0.62 -- j6.43
1940
3.61 -- j9.59
0.48 -- j6.11
1960
3.50 -- j9.30
0.35 -- j5.70
1980
3.58 -- j9.10
0.35 -- j5.32
2000
3.61 -- j9.13
0.35 -- j5.07
2020
3.43 -- j9.10
0.21 -- j4.75
2040
3.10 -- j8.55
0.10 -- j4.19
Note: Measured with Carrier side open.
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 12. Series Equivalent Source and Load Impedance ? Peaking Side
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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