- 您现在的位置：买卖IC网 > PDF目录21719 > MRFE6VP8600HR6 (Freescale Semiconductor)RF FET LDMOS 50V NI1230H PDF资料下载
参数资料
| 型号： | MRFE6VP8600HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/20页 |
| 文件大小： | 1263K |
| 描述： | RF FET LDMOS 50V NI1230H |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 860MHz |
| 增益： | 19.3dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 125W |
| 电压 - 额定： | 130V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
ll rights reserved.MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
1
RF Device Data
Freescale Semiconductor
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Optimized for broadband operation from 470 to 860 MHz. Device has an
integrated input matching network for better power distribution. These devices
are ideally suited for use in analog or digital television transmitters.
?
Typical Narrowband Performance: VDD
=50Volts,IDQ
= 1400 mA,
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF. ACPR measured
in 7.61 MHz Signal Bandwidth @
±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
DVB--T (8k OFDM)
125 Avg.
860
19.3
30.0
--60.5
-- 1 2
?
Typical Pulsed Broadband Performance: VDD
=50Volts,IDQ
= 1400 mA,
Pulsed Width = 100
μsec, Duty Cycle = 10%
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Pulsed
600 Peak
470
19.3
47.1
650
20.0
53.1
860
18.8
48.9
Features
?
Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc,
860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input
Overdrive from Rated Pout)
?
Exceptional Efficiency for Class AB Analog or Digital Television Operation
?
Full Performance across Complete UHF TV Spectrum, 470--860 MHz
?
Capable of 600 Watt CW Output Power with Adequate Thermal Management
?
Integrated Input Matching
?
Extended Negative Gate--Source
Voltage Range of --6.0 V to +10 V
?
Improves Class C Performance, e.g. in a Doherty Peaking Stage
?
Enables Fast, Easy and Complete Shutdown of the Amplifier
?
Characterized from 20 V to 50 V for Extended Operating Range for use
with Drain Modulation
?
Excellent Thermal Characteristics
?
RoHS Compliant
?
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +130
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
1052
5.26
W
W/°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software &
Tools/Development Tools/Calculators to access MTTF calculators by product.
Document Number: MRFE6VP8600H
Rev. 1, 9/2011
Freescale Semiconductor
Technical Data
470--860 MHz, 600 W, 50 V
LDMOS BROADBAND
RF POWER TRANSISTORS
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
CASE 375D--05, STYLE 1
NI--1230
MRFE6VP8600HR6
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP8600HSR6
PARTS ARE PUSH--PULL
Figure 1. Pin Connections
(Top View)
Gate 1
31Drain 1
Gate 2
42Drain 2
Note: The backside of the package is the
source terminal for the transistor.
?
Freescale Semiconductor, Inc., 2011.
A
相关PDF资料 |
PDF描述 |
|---|---|
| B84312C90B104 | FILTER COMM LINE EMP 0.1A 100VAC |
| MC22FD122J-TF | CAP MICA 1200PF 500V 5% 2220 |
| MTM8106DRA04 | SW TOGGLE SPDT SHORT LVR RA PC |
| B84312F60B1 | FILTER COMM LINE 0.1A 100VAC |
| MC22FD112J-TF | CAP MICA 1100PF 500V 5% 2220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6VP8600HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP8600HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VS25GNR1 | 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VS25LR5 | 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VS25N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistor |
发布紧急采购，3分钟左右您将得到回复。