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参数资料
| 型号： | MRFE6VP8600HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 12/20页 |
| 文件大小： | 1263K |
| 描述： | RF FET LDMOS 50V NI1230H |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 860MHz |
| 增益： | 19.3dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 1.4A |
| 功率 - 输出： | 125W |
| 电压 - 额定： | 130V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 74°C, 125 W CW, 50 V, 1400 mA, 860 MHz
RθJC
0.19
(3)
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115)
B (201--400 V)
Charge Device Model (per JESD22--C101)
IV (>1000 V)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(4)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
= 100 mA)
V(BR)DSS
130
140
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
5
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
20
μAdc
On Characteristics
Gate Threshold Voltage
(4)
(VDS
=10Vdc,ID
= 980
μAdc)
VGS(th)
1.5
2.07
2.5
Vdc
Gate Quiescent Voltage
(5)
(VDD
=50Vdc,ID
= 1400 mAdc, Measured in Functional Test)
VGS(Q)
2.1
2.65
3.1
Vdc
Drain--Source On--Voltage
(4)
(VGS
=10Vdc,ID
=2Adc)
VDS(on)
?
0.24
?
Vdc
Forward Transconductance
(VDS
=10Vdc,ID
=20Adc)
gfs
?
15.6
?
S
Dynamic Characteristics
(4)
Reverse Transfer Capacitance
(6)
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.49
?
pF
Output Capacitance
(6)
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
79.9
?
pF
Input Capacitance
(7)
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
264
?
pF
Functional Tests
(5)
(In Freescale Narrowband Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 1400 mA, Pout
= 125 W Avg., f = 860 MHz,
DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @
±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Power Gain
Gps
18.0
19.3
21.0
dB
Drain Efficiency
ηD
29.0
30.0
?
%
Adjacent Channel Power Ratio
ACPR
?
--60.5
--58.5
dBc
Input Return Loss
IRL
?
-- 1 2
-- 9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05°C/W due to the increased thermal contact
resistance of this TIM.
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
6. Part internally input matched.
7. Die capacitance value without internal matching.
(continued)
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