参数资料
型号: MSC8101VT1250F
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 数字信号处理
英文描述: 64-BIT, 62.5 MHz, OTHER DSP, PBGA332
封装: 17 X 17 MM, LIDDED FLIP CHIP, PLASTIC, BGA-332
文件页数: 43/104页
文件大小: 1811K
代理商: MSC8101VT1250F
DC Electrical Characteristics
MSC8101 Technical Data, Rev. 18
Freescale Semiconductor
2-3
This section describes the DC electrical characteristics for the MSC8101. The measurements in Table 2-4 assume
the following system conditions:
TJ = 0 – 100 °C
VDD = 1.6 V ± 5% VDC
VDDH = 3.3 V ± 5% VDC
GND
= 0 VDC
Note:
The leakage current is measured for nominal VDDH and VDD or both VDDH and VDD must vary in the same
direction (for example, both VDDH and VDD vary by ± 5 percent).
Table 2-4.
DC Electrical Characteristics
Characteristic
Symbol
Min
Max
Unit
Input high voltage1, all inputs except CLKIN
VIH
2.0
3.465
V
Input low voltage1
VIL
GND
0.8
V
CLKIN input high voltage
VIHC
2.5
3.465
V
CLKIN input low voltage2
VILC
GND
0.8
V
Input leakage current, VIN = VDDH
IIN
—10
A
Tri-state (high impedance off state) leakage current,
VIN = VDDH
IOZ
—10
A
Signal low input current3, VIL = 0.4 V
IL
–4.0
mA
Signal high input current3, VIH = 2.0 V
IH
—4.0
mA
Output high voltage, IOH = –2 mA, except open drain pins
VOH
2.4
V
Output low voltage, IOL= 3.2 mA
VOL
—0.4
V
Notes:
1.
See Figure 2-1 for undershoot and overshoot voltages.
2.
The optimum CLKIN duty cycle is obtained when: VILC = VDDH – VIHC.
3.
Not tested. Guaranteed by design.
Figure 2-1.
Overshoot/Undershoot Voltage for VIH and VIL
Table 2-5.
Typical Power Dissipation
Characteristic
Symbol
Typical
Unit
Core power dissipation at 300 MHz
PCORE
450
mW
CPM power dissipation at 200 MHz
PCPM
320
mW
SIU power dissipation at 100 MHz
PSIU
80
mW
Core leakage power
PLCO
3mW
CPM leakage power
PLCP
6mW
SIU leakage power
PLSI
2mW
GND
GND – 0.3 V
GND – 0.7 V
VIL
VIH
Must not exceed 10% of clock period
VDDH + 20%
VDDH + 10%
VDDH
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