参数资料
型号: MSP430F2370TRHAR
厂商: Texas Instruments
文件页数: 38/65页
文件大小: 0K
描述: IC MCU 16BIT 32K FLASH 40-QFN
产品培训模块: The Ultra-Low Power MSP430
MSP430 Overview
MSP430 Design Tools
MSP430 Peripherals
MSP430x2xx/4xx and Wireless Overview
Portable Medical Solutions with MSP430
MSP430 for Utility Metering Solutions
MSP430: How to JTAG
MSP430, How To Use the Clock System
Grace Software Graphical User Interface
MCU Overview
Driver Library
MSP430Ware Overview
标准包装: 2,500
系列: MSP430F2xx
核心处理器: RISC
芯体尺寸: 16-位
速度: 16MHz
连通性: I²C,IrDA,LIN,SCI,SPI,UART/USART
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 32
程序存储器容量: 32KB(32K x 8 + 256B)
程序存储器类型: 闪存
RAM 容量: 2K x 8
电压 - 电源 (Vcc/Vdd): 1.8 V ~ 3.6 V
数据转换器: 斜率 A/D
振荡器型: 内部
工作温度: -40°C ~ 105°C
封装/外壳: 40-VFQFN 裸露焊盘
包装: 带卷 (TR)
配用: 296-23115-ND - TOOL FLASH EMU MSP430 40PIN RHA
MSP430F23x0
SLAS518E
– AUGUST 2006 – REVISED AUGUST 2011
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC (PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
1
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
1
7
mA
tCPT
Cumulative program time(1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
See (2)
30
tFTG
tBlock, 0
Block program time for first byte or word
See (2)
25
tFTG
Block program time for each additional
tBlock, 1-63
See (2)
18
tFTG
byte or word
tBlock, End
Block program end-sequence wait time
See (2)
6
tFTG
tMass Erase
Mass erase time
See (2)
10593
tFTG
tSeg Erase
Segment erase time
See (2)
4819
tFTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the flash controller
's state machine (tFTG = 1/fFTG).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V(RAMh)
RAM retention supply voltage (1)
CPU halted
1.6
V
(1)
This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
JTAG Interface
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
VCC
MIN
TYP
MAX
UNIT
2.2 V
0
5
MHz
fTCK
TCK input frequency(1)
3 V
0
10
MHz
RInternal
Internal pulldown resistance on TEST(2)
2.2 V/3 V
25
35
55
k
(1)
fTCK may be restricted to meet the timing requirements of the module selected.
(2)
TMS, TDI/TCLK, and TCK pullup resistors are implemented in all versions.
JTAG Fuse
(1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VCC(FB)
Supply voltage during fuse-blow condition
TA = 25°C
2.5
V
VFB
Voltage level on TEST for fuse blow
6
7
V
IFB
Supply current into TEST during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
(1)
After the fuse is blown, no further access to the JTAG/Test and emulation features is possible, and the JTAG block is switched to
bypass mode.
Copyright
2006–2011, Texas Instruments Incorporated
43
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