- 您现在的位置：买卖IC网 > PDF目录4013 > MT42L128M64D4LD-3 IT:A (Micron Technology Inc)IC LPDDR2 SDRAM 8GBIT 220FBGA PDF资料下载
参数资料
| 型号： | MT42L128M64D4LD-3 IT:A |
| 厂商： | Micron Technology Inc |
| 文件页数： | 109/164页 |
| 文件大小： | 0K |
| 描述： | IC LPDDR2 SDRAM 8GBIT 220FBGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 LPDDR2 SDRAM |
| 存储容量： | 8G（128M x 64） |
| 速度： | 333MHz |
| 接口： | 并联 |
| 电源电压： | 1.14 V ~ 1.3 V |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | 220-VFBGA |
| 供应商设备封装： | 220-FBGA（14x14） |
| 包装： | 散装 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页当前第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页第119页第120页第121页第122页第123页第124页第125页第126页第127页第128页第129页第130页第131页第132页第133页第134页第135页第136页第137页第138页第139页第140页第141页第142页第143页第144页第145页第146页第147页第148页第149页第150页第151页第152页第153页第154页第155页第156页第157页第158页第159页第160页第161页第162页第163页第164页
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
Truth Tables
READ with AP enabled: Starts with registration of a READ command with auto pre-
charge enabled and ends when t RP is met. After t RP is met, the bank is in the idle state.
WRITE with AP enabled: Starts with registration of a WRITE command with auto pre-
charge enabled and ends when t RP is met. After t RP is met, the bank is in the idle state.
5. The states listed below must not be interrupted by any executable command. NOP com-
mands must be applied to each rising clock edge during these states.
Refresh (per bank): Starts with registration of a REFRESH (per bank) command and ends
when t RFCpb is met. After t RFCpb is met, the bank is in the idle state.
Refresh (all banks): Starts with registration of a REFRESH (all banks) command and ends
when t RFCab is met. After t RFCab is met, the device is in the all banks idle state.
Idle MR reading: Starts with registration of the MRR command and ends when t MRR is
met. After t MRR is met, the device is in the all banks idle state.
Resetting MR reading: Starts with registration of the MRR command and ends when
t MRR is met. After t MRR is met, the device is in the all banks idle state.
Active MR reading: Starts with registration of the MRR command and ends when t MRR
is met. After t MRR is met, the bank is in the active state.
MR writing: Starts with registration of the MRW command and ends when t MRW is met.
After t MRW is met, the device is in the all banks idle state.
Precharging all: Starts with registration of a PRECHARGE ALL command and ends when
t RP is met. After t RP is met, the device is in the all banks idle state.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
Bank-specific; requires that the bank is idle and no bursts are in progress.
Not bank-specific; requires that all banks are idle and no bursts are in progress.
Not bank-specific.
This command may or may not be bank specific. If all banks are being precharged, they
must be in a valid state for precharging.
If a PRECHARGE command is issued to a bank in the idle state, t RP still applies.
A command other than NOP should not be issued to the same bank while a burst READ
or burst WRITE with auto precharge is enabled.
The new READ or WRITE command could be auto precharge enabled or auto precharge
disabled.
A WRITE command can be issued after the completion of the READ burst; otherwise, a
BST must be issued to end the READ prior to asserting a WRITE command.
Not bank-specific. The BST command affects the most recent READ/WRITE burst started
by the most recent READ/WRITE command, regardless of bank.
A READ command can be issued after completion of the WRITE burst; otherwise, a BST
must be used to end the WRITE prior to asserting another READ command.
Table 52: Current State Bank n to Command to Bank m Truth Table
Notes 1–6 apply to all parameters and conditions
Current State
of Bank n
Any
Idle
Command to Bank m
NOP
Any
Operation
Continue previous operation
Any command supported to bank m
Next State for Bank m
Current state of bank m
–
Notes
7
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
109
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MT42L128M64D4LC-3 IT:A | IC LPDDR2 SDRAM 8GBIT 240FBGA |
| FMC49DRYI-S734 | CONN EDGECARD 98POS DIP .100 SLD |
| GMC43DTES | CONN EDGECARD 86POS .100 EYELET |
| EMC43DTEI | CONN EDGECARD 86POS .100 EYELET |
| FMC43DRAI-S734 | CONN EDGECARD 86POS .100 R/A SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT42L192M32D2KQ-25 WT | 制造商:Micron Technology Inc 功能描述:192MX32 LPDDR2 PLASTIC WIRELESS TEMP GREEN WFBGA 1.2V - Bulk |
发布紧急采购，3分钟左右您将得到回复。