参数资料
型号: MT45W2MV16BABB-856WT
元件分类: SRAM
英文描述: 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54
封装: LEAD FREE, FBGA-54
文件页数: 13/55页
文件大小: 816K
代理商: MT45W2MV16BABB-856WT
2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
ADVANCE
09005aef80ec6f63
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_32.fm - Rev. A 2/18/04 EN
20
2004 Micron Technology, Inc. All Rights Reserved.
Latency Counter (BCR[13:11])
Default = Three-Clock Latency
The latency counter bits determine how many
clocks occur between the beginning of a READ or
WRITE operation and the first data value transferred.
Only latency code two (three clocks) or latency code
three (four clocks) is allowed (see Table 7 and Figure 19
below).
Operating Mode (BCR[15])
Default = Asynchronous Operation
The operating mode bit selects either synchronous
burst operation or the default asynchronous mode of
operation.
NOTE:
1. Clock rates below 50 MHz are allowed as long as tCSP specifications are met.
Figure 19: Latency Counter
Table 7:
Latency Configuration
LATENCY CONFIGURATION CODE
MAX INPUT CLK FREQUENCY (MHz)
-701
-706
-856
2 (3 clocks)
66 (15.2ns)
441 (22.7ns)
3 (4 clocks) – default
104 (9.62ns)
66 (15.2ns)
A[20:0]
ADV#
DQ[15:0]
CLK
Code 2
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
Code 3
(Default)
DQ[15:0]
DON’T CARE
UNDEFINED
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VOH
VOL
VALID
ADDRESS
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