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参数资料
| 型号： | MT45W2MV16BABB-856WT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54 |
| 封装： | LEAD FREE, FBGA-54 |
| 文件页数： | 16/55页 |
| 文件大小： | 816K |
| 代理商： | MT45W2MV16BABB-856WT |
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2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
ADVANCE
09005aef80ec6f63
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_32.fm - Rev. A 2/18/04 EN
23
2004 Micron Technology, Inc. All Rights Reserved.
Absolute Maximum Ratings*
Voltage to Any Ball Except VCC, VCCQ
Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . -0.50V to (4.0V or VCCQ + 0.3V, whichever is less)
Voltage on VCC Supply Relative to VSS. . -0.2V to +2.45V
Voltage on VCCQ Supply Relative to VSS . -0.2V to +4.0V
Storage Temperature (plastic). . . . . . . . -55C to +150C
Operating Temperature (case)
Wireless. . . . . . . . . . . . . . . . . . . . . . . . . . -25C to +85C
Industrial . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C
Soldering Temperature and Time
10s (lead only) . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C
*Stresses greater than those listed may cause per-
manent damage to the device. This is a stress rating
only, and functional operation of the device at these or
any other conditions above those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect reliability.
NOTE:
1. Input signals may overshoot to VccQ + 1.0V for periods less than 2ns during transitions.
2. Input signals may undershoot to Vss - 1.0V for periods less than 2ns during transitions.
3. BCR[5:4] = 00b.
4. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the cur-
rent required to drive output capacitance expected in the actual system.
5. ISB (MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C. In order to achieve low standby cur-
rent, all inputs must be driven to either VCCQ or VSS.
Table 10:
Electrical Characteristics and Operating Conditions
Wireless Temperature (-25C < TC < +85C); Industrial Temperature (-40C < TC < +85C)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Supply Voltage
VCC
1.70
1.95
V
I/O Supply Voltage
VCCQ
W: 1.8V
1.70
2.25
V
V: 2.5V
2.30
2.70
V
L: 3.0V
2.70
3.30
V
Input High Voltage
VIH
1.40
VCCQ + 0.2
V
1
Input Low Voltage
VIL
-0.20
0.4
V
2
Output High Voltage
IOH = -0.2mA
VOH
0.80 VCCQV
3
Output Low Voltage
IOL = +0.2mA
VOL
0.20 VCCQV
3
Input Leakage Current
VIN = 0 to VCCQILI
1A
Output Leakage Current
OE# = VIH or
Chip Disabled
ILO
1A
Operating Current
Asynchronous Random
READ
VIN = VCCQ or 0V
Chip Enabled,
IOUT = 0
ICC1
-70
25
mA
4
-85
20
Asynchronous Page READ
-70
15
-85
12
Initial Access, Burst READ
VIN = VCCQ or 0V
Chip Enabled,
IOUT = 0
ICC1
104 MHz
35
mA
4
66 MHz
30
Continuous Burst READ
104 MHz
11
66 MHz
11
WRITE Operating Current
VIN = VCCQ or 0V
Chip Enabled
ICC2
-70
25
mA
-85
20
Standby Current
VIN = VCCQ or 0V
CE# = VCCQ
ISB
Standard
110
A
5
Low-Power (L)
90
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