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参数资料
| 型号： | MT46V4M32LG |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | I.MX31 LITE KIT |
| 中文描述： | 双倍数据速率的DDR SDRAM内存 |
| 文件页数： | 11/66页 |
| 文件大小： | 1921K |
| 代理商： | MT46V4M32LG |
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11
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
DDR SDRAM
ADVANCE
appear following the Operation section; these tables
provide current state/next state information.
Commands
Truth Table 1 provides a quick reference of avail-
able commands. This is followed by a verbal descrip-
tion of each command. Two additional Truth Tables
NOTE:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. BA0-BA1 select either the mode register or the extended mode register (BA0 = 0, BA1 = 0 select the mode register;
BA0 = 1, BA1 = 0 select extended mode register; other combinations of BA0-BA1 are reserved). A0-A11 provide the op-
code to be written to the selected mode register.
3. BA0-BA1 provide bank address and A0-A11provide row address.
4. BA0-BA1 provide bank address; A0-A
7
provide column address; A8 HIGH enables the auto precharge feature (nonpersis-
tent), and A8 LOW disables the auto precharge feature.
5. A8 LOW: BA0-BA1 determine which bank is precharged.
A8 HIGH: all banks are precharged and BA0-BA1 are “Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE.
8. Applies only to read bursts with auto precharge disabled; this command is undefined (and should not be used) for READ
bursts with auto precharge enabled and for WRITE bursts.
9. DESELECT and NOP are functionally interchangeable.
10. Used to mask write data; provided coincident with the corresponding data.
TRUTH TABLE 1 – COMMANDS
(Note: 1)
NAME (FUNCTION)
DESELECT (NOP)
NO OPERATION (NOP)
ACTIVE (Select bank and activate row)
READ (Select bank and column, and start READ burst)
WRITE (Select bank and column, and start WRITE burst)
BURST TERMINATE
PRECHARGE (Deactivate row in bank or banks)
AUTO REFRESH or SELF REFRESH
(Enter self refresh mode)
LOAD MODE REGISTER
CS# RAS#CAS# WE#
H
X
L
H
L
L
L
H
L
H
L
H
L
L
L
L
ADDR
X
X
Bank/Row
Bank/Col
Bank/Col
X
Code
X
NOTES
9
9
3
4
4
8
5
6, 7
X
H
H
L
L
H
H
L
X
H
H
H
L
L
L
H
L
L
L
L
Op-Code
2
TRUTH TABLE 1A – DM OPERATION
NAME (FUNCTION)
Write Enable
Write Inhibit
DM
L
H
DQs
Valid
X
NOTES
10
10
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相关代理商/技术参数 |
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| MT46V64M16 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:DOUBLE DATA RATE (DDR) SDRAM |
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