参数资料
型号: MT46V4M32LG
厂商: Micron Technology, Inc.
英文描述: I.MX31 LITE KIT
中文描述: 双倍数据速率的DDR SDRAM内存
文件页数: 23/66页
文件大小: 1921K
代理商: MT46V4M32LG
23
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
DDR SDRAM
ADVANCE
Figure 13
READ to PRECHARGE
CK
CK#
COMMAND
6
READ
NOP
PRE
NOP
NOP
ACT
ADDRESS
Bank
a
,
Col
n
Bank
a
,
(
a
or
all
)
Bank
a
,
Row
READ
NOP
PRE
NOP
NOP
ACT
Bank
a
,
Col
n
CL = 2
tRP
tRP
NOTE
: 1. DO
n
= data-out from column
n
.
2. Burst length = 4, or an interrupted burst of 8 or full page.
3. Three subsequent elements of data-out appear in the programmed order following DO
n
.
4. Shown with nominal tAC, tDQSCK, and tDQSQ.
5. READ to PRECHARGE equals two clocks, which allows two data pairs of data-out.
6. PRE = PRECHARGE command; ACT = ACTIVE command.
CK
CK#
COMMAND
6
ADDRESS
DQ
DQS
CL = 3
DQ
DQS
DO
n
DO
n
T0
T1
T2
T3
T3n
T4
T5
T6
T0
T1
T2
T3
T2n
T3n
T4
T5
Bank
a
,
(
a
or
all
)
Bank
a
,
Row
DON T CARE
TRANSITIONING DATA
NOP
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