参数资料
型号: MT46V4M32LG
厂商: Micron Technology, Inc.
英文描述: I.MX31 LITE KIT
中文描述: 双倍数据速率的DDR SDRAM内存
文件页数: 64/66页
文件大小: 1921K
代理商: MT46V4M32LG
64
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
DDR SDRAM
ADVANCE
WRITE – DM OPERATION
TIMING PARAMETERS
-33
-4
-5
SYMBOL
t
CH
t
CL
t
CK (5)
t
CK (4)
t
CK (3)
t
DH
t
DS
t
DQSH
t
DQSL
t
DQSS
MIN
0.45
0.45
3.3
4
-
0.45
0.45
0.4
0.4
0.8
MAX
0.55
0.55
8
8
-
MIN
0.45
0.45
-
4
5
0.45
0.45
0.4
0.4
0.8
MAX
0.55
0.55
-
8
8
MIN
0.45
0.45
-
-
5
0.45
0.45
0.4
0.4
0.8
MAX
0.55
0.55
-
-
8
UNITS
t
CK
t
CK
ns
ns
ns
ns
ns
t
CK
t
CK
t
CK
1.2
1.2
1.2
-33
-4
-5
SYMBOL
t
DSS
t
DSH
t
IH
t
IS
t
RAS
t
RCDW
t
RP
t
WPRE
t
WPRES
t
WPST
t
WR
MIN
0.25
0.25
0.9
0.9
40
10
16
0.25
0
0.4
3
MAX
MIN
0.25
0.25
0.9
0.9
40
10
16
0.25
0
0.4
3
MAX
MIN
0.25
0.25
0.9
0.9
40
10
20
0.25
0
0.4
2
MAX
UNITS
t
CK
t
CK
ns
ns
ns
ns
ns
t
CK
ns
t
CK
t
CK
120,000
120,000
120,000
0.6
0.6
0.6
CK
CK#
CKE
A8
BA0, BA1
t
CK
t
CH
t
CL
t
IS
t
IS
t
IH
t
IS
t
IS
t
IH
t
IH
t
IH
t
IS
t
IH
RA
t
RCD
t
RAS
t
DSH
7
tRP
tWR
T0
T1
T2
T3
T4
T5
T5n
T6
T7
T8
T4n
NOTE:
1. DI
n
= data-out from column
n
; subsequent elements are provided in the programmed order.
2. Burst length = 4 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A8 is HIGH at T8.
5. PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address.
6. NOP commands are shown for ease of illustration; other commands may be valid at these times.
7
.tDSH is applicable during tDQSS (MIN)
and is referenced from CK T4 or T5.
8
.tDSS is applicable during tDQSS (MAX)
and is referenced from CK T5 or T6.
9.
tDS and tDH are referanced from DQS
NOP6
NOP6
COMMAND
5
3
ACT
RA
RA
Col
n
WRITE2
NOP6
ONE BANK
ALL BANKS
Bank
x
PRE
Bank
x
NOP6
NOP6
NOP6
t
DQSL
t
DQSH
t
WPST
t
DSS
8
t
DSH
7
t
DSS
8
Bank
x
4
DQ
1
DQS
DM
DI
b
t
DS
t
DH
DON’T CARE
TRANSITIONING DATA
t
DQSS (NOM)
A0-A7
A9-A11
t
WPRES
t
WPRE
相关PDF资料
PDF描述
MT46V64M4 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4组,双数据速率同步动态RAM)
MT46V64M8 16 Meg x 8 x 4 banks DDR SDRAM(16M x 8 x 4组,双数据速率同步动态RAM)
MT48LC16M8A1TG SYNCHRONOUS DRAM
MT48LC32M4A1 ECONOLINE: RSZ/P - 1kVDC
MT48LC32M4A2 SYNCHRONOUS DRAM
相关代理商/技术参数
参数描述
MT46V64M16 制造商:MICRON 制造商全称:Micron Technology 功能描述:DOUBLE DATA RATE (DDR) SDRAM