参数资料
型号: MT46V8M8
厂商: Micron Technology, Inc.
英文描述: 2 Meg x 8 x 4 banks DDR SDRAM(2 M x 8 x 4组,双数据速率同步动态RAM)
中文描述: 2梅格× 8 × 4银行DDR SDRAM内存(2米× 8 × 4组,双数据速率同步动态RAM)的
文件页数: 67/69页
文件大小: 2369K
代理商: MT46V8M8
67
64Mb: x4, x8, x16 DDR SDRAM
64Mx4x8x16DDR_B.p65
Rev. B; Pub. 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb: x4, x8, x16
DDR SDRAM
BANK WRITE – WITH AUTO PRECHARGE
TIMING PARAMETERS
-7
-75
-8
SYMBOL
t
CH
t
CL
t
CK (2.5)
t
CK (2)
t
DH
t
DS
t
DQSH
t
DQSL
t
DQSS
t
DSS
MIN
0.45
0.45
7
7.5
0.5
0.5
0.35
0.35
0.75
0.2
MAX
0.55
0.55
12
12
MIN
0.45
0.45
7.5
10
0.5
0.5
0.35
0.35
0.75
0.2
MAX
0.55
0.55
12
12
MIN
0.45
0.45
8
10
0.6
0.6
0.35
0.35
0.75
0.2
MAX
0.55
0.55
12
12
UNITS
t
CK
t
CK
ns
ns
ns
ns
t
CK
t
CK
t
CK
t
CK
1.25
1.25
1.25
-7
-75
-8
SYMBOL
t
DSH
t
IH
t
IS
t
RAS
t
RCD
t
RP
t
WPRE
t
WPRES
t
WPST
t
WR
MIN
0.2
1
1
45
15
15
0.25
0
0.4
15
MAX
MIN
0.2
1
1
45
20
20
0.25
0
0.4
15
MAX
MIN
0.2
1.1
1.1
50
20
20
0.25
0
0.4
15
MAX
UNITS
t
CK
ns
ns
ns
ns
ns
t
CK
ns
t
CK
ns
120,000
120,000
120,000
0.6
0.6
0.6
CK
CK#
CKE
A10
BA0, BA1
t
CK
t
CH
tCL
t
IS
t
IS
t
IH
t
IS
t
IS
t
IH
t
IH
t
IH
t
IS
t
IH
RA
t
RCD
t
RAS
t
DSH
6
t
RP
t
WR
T0
T1
T2
T3
T4
T5
T5n
T6
T7
T8
T4n
x4: A0-A9
x8: A0-A8
x16: A0-A7
x4: A11
x8: A9, A11
x16: A8, A9, A11
NOTE:
1. DI
n
= data-out from column
n
; subsequent elements are provided in the programmed order.
2. Burst length = 4 in the case shown.
3. Enable auto precharge.
4. ACT = ACTIVE, RA = Row Address, BA = Bank Address.
5. NOP commands are shown for ease of illustration; other commands may be valid at these times.
6.tDSH is applicable during tDQSS(MIN)
and is referenced from CK T4 or T5.
7.tDSS is applicable during tDQSS (MAX)
and is referenced from CK T5 or T6.
NOP5
NOP5
COMMAND
4
3
ACT
RA
RA
Col
n
WRITE2
NOP5
Bank
x
NOP5
Bank
x
NOP5
NOP5
NOP5
t
DQSL
t
DQSH
t
WPST
t
DSS
7
t
DSH
6
t
DSS
7
DQ
1
DQS
DM
DI
b
t
DS
t
DH
t
DQSS (NOM)
DON
T CARE
TRANSITIONING DATA
t
WPRES
t
WPRE
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