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参数资料
| 型号： | MTB2P50ET4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 500V 2A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1183pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
MTB2P50E
Preferred Device
Power MOSFET
2 Amps, 500 Volts
P?Channel D 2 PAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage?blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain?to?source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source?to?Drain Diode Recovery Time Comparable to a Discrete
http://onsemi.com
2 AMPERES, 500 VOLTS
R DS(on) = 6 W
P?Channel
D
G
?
?
?
?
?
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Pb?Free Package is Available
1
S
D 2 PAK
CASE 418B
STYLE 2
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
MARKING DIAGRAM & PIN ASSIGNMENT
Rating
Drain?Source Voltage
Drain?Gate Voltage (R GS = 1.0 M W )
Symbol
V DSS
V DGR
Value
500
500
Unit
Vdc
Vdc
4
Drain
Gate?Source Voltage ? Continuous
Non?Repetitive (t p ≤ 10 ms)
V GS
V GSM
± 20
± 40
Vdc
Vpk
T
P50EG
AYWW
2
Drain Current ? Continuous
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
I D
I D
I DM
2.0
1.6
6.0
Adc
Apk
1
Gate
2
3
Source
Total Power Dissipation
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
P D
T J , T stg
E AS
75
0.6
2.5
?55 to
150
80
W
W/ ° C
° C
mJ
T2P50E
A
Y
WW
G
Drain
= Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
(V DD = 100 Vdc, V GS = 10 Vdc,
I L = 4.0 Apk, L = 10 mH, R G = 25 W )
ORDERING INFORMATION
Thermal Resistance
° C/W
Device
Package
Shipping ?
? Junction?to?Case
? Junction?to?Ambient
? Junction?to?Ambient (Note 1)
R q JC
R q JA
R q JA
1.67
62.5
50
MTB2P50ET4
MTB2P50ET4G
D 2 PAK
D 2 PAK
800/Tape & Reel
800/Tape & Reel
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
June, 2006 ? Rev. 4
1
Publication Order Number:
MTB2P50E/D
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