参数资料
型号: MTB2P50ET4G
厂商: ON Semiconductor
文件页数: 6/8页
文件大小: 0K
描述: MOSFET P-CH 500V 2A D2PAK
标准包装: 800
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 6 欧姆 @ 1A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 27nC @ 10V
输入电容 (Ciss) @ Vds: 1183pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)
MTB2P50E
SAFE OPERATING AREA
10
1
0.1
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
100 m s
1 ms
10 ms
R DS(on) LIMIT
10 m s
dc
80
60
40
20
I D = 2 A
THERMAL LIMIT
0.01
0.1
1
PACKAGE LIMIT
10
100
1000
0
25
50
75
100
125
150
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1
D = 0.5
0.2
0.1
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
0.05
0.02
0.01
SINGLE PULSE
P ( pk)
t 1
t 2
DUTY CYCLE, D = t 1 /t 2
R q JC (t) = r(t) R q JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) ? T C = P (pk) R q JC (t)
0.01
1.0E?05
1.0E?04
1.0E?03
1.0E?02
1.0E?01
1.0E+00
1.0E+01
t, TIME (s)
Figure 13. Thermal Response
di/dt
3
2.5
2.0
R q JA = 50 ° C/W
Board material = 0.065 mil FR?4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
I S
1.5
t a
t rr
t b
TIME
1
0.5
t p
I S
0.25 I S
0
25
50
75 100
T A , AMBIENT TEMPERATURE ( ° C)
125
150
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
6
Figure 15. D 2 PAK Power Derating Curve
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