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| 型号： | MTB2P50ET4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 500V 2A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1183pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
MTB2P50E
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
V (BR)DSS
500
?
?
564
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 500 Vdc, V GS = 0 Vdc)
(V DS = 500 Vdc, V GS = 0 Vdc, T J = 125 ° C)
?
?
?
?
10
100
Gate?Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
I GSS
?
?
100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain?Source On?Resistance (V GS = 10 Vdc, I D = 1.0 Adc)
V GS(th)
R DS(on)
2.0
?
?
3.0
4.0
4.5
4.0
?
6.0
Vdc
mV/ ° C
W
Drain?Source On?Voltage (V GS = 10 Vdc)
V DS(on)
Vdc
(I D = 2.0 Adc)
(I D = 1.0 Adc, T J = 125 ° C)
?
?
9.5
?
14.4
12.6
Forward Transconductance (V DS = 15 Vdc, I D = 1.0 Adc)
g FS
1.5
2.9
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
845
1183
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C oss
C rss
?
?
100
26
140
52
SWITCHING CHARACTERISTICS (Note 3)
Turn?On Delay Time
t d(on)
?
12
24
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 250 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
14
21
19
28
42
38
Gate Charge (See Figure 8)
(V DS = 400 Vdc, I D = 2.0 Adc, V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
19
3.7
7.9
9.9
27
?
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage (Note 2)
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored Charge
(I S = 2.0 Adc, V GS = 0 Vdc)
(I S = 2.0 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 2.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
2.3
1.85
223
161
62
1.92
3.5
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
4.5
7.5
?
?
nH
nH
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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