参数资料
型号: MTD20N06HD1
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: CASE 369D-01, DPAK-3
文件页数: 11/12页
文件大小: 121K
代理商: MTD20N06HD1
MTD20N06HD
http://onsemi.com
8
INFORMATION FOR USING THE DPAK SURFACE MOUNT PACKAGE
RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE
The power dissipation for a surface mount device is a
function of the drain pad size. These can vary from the
minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a
surface mount device is determined by TJ(max), the
maximum rated junction temperature of the die, RθJA, the
thermal resistance from the device junction to ambient, and
the operating temperature, TA. Using the values provided
on the data sheet, PD can be calculated as follows:
PD =
TJ(max) TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device. For a
DPAK device, PD is calculated as follows.
PD =
150
°C 25°C
71.4
°C/W
= 1.75 Watts
The 71.4
°C/W for the DPAK package assumes the use of
0.5 sq.in. source pad on a glass epoxy printed circuit board
to achieve a power dissipation of 1.75 Watts. There are
other alternatives to achieving higher power dissipation
from the surface mount packages. One is to increase the
area of the drain pad. By increasing the area of the drain
pad, the power dissipation can be increased. Although one
can almost double the power dissipation with this method,
one will be giving up area on the printed circuit board
which can defeat the purpose of using surface mount
technology. For example, a graph of RθJA versus drain pad
area is shown in Figure 15.
Figure 15. Thermal Resistance versus Drain Pad
Area for the DPAK Package (Typical)
1.75 Watts
Board Material = 0.0625
G10/FR4, 2 oz Copper
80
100
60
40
20
10
8
6
4
2
0
3.0 Watts
5.0 Watts
TA = 25°C
A, AREA (SQUARE INCHES)
T
O
AMBIENT
(
C/W)°
R
JA
,THERMAL
RESIST
ANCE,
JUNCTION
θ
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Clad
t. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
相关PDF资料
PDF描述
MTD20N06HDLT4 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD20N06HDT4 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD20P03HDLT4 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD20P06HDLT4 20 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET
MTD2955ET4 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
MTD20N06HD-1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK
MTD20N06HDL 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC D-PAK
MTD20N06HDLT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
MTD20N06HDLT4G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK
MTD20N06HDT4 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R