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参数资料
| 型号： | MTD20N06HD1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369D-01, DPAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 121K |
| 代理商： | MTD20N06HD1 |
MTD20N06HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (Amps)
VDS, DRAINTOSOURCE VOLTAGE (Volts)
VGS, GATETOSOURCE VOLTAGE (Volts)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
0
1.0
2.0
3.0
4.0
5.0
0.5
1.5
2.5
3.5
4.5
0
8
16
24
40
Figure 1. OnRegion Characteristics
0
10
20
30
40
Figure 2. Transfer Characteristics
010
20
30
40
0.020
0.028
0.036
0.044
0.052
0.028
0.030
0.032
0.036
0.040
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0.6
0.8
1.0
1.2
1.6
Figure 5. OnResistance Variation with
Temperature
32
VGS = 10 V
8 V
9 V
5 V
6 V
TJ = 25°C
7 V
23
4
5
7
68
VDS ≥ 10 V
100
°C
25
°C
0.048
0.040
0.032
0.024
VGS = 10 V
55
°C
25
°C
010
20
30
40
0.038
0.034
50
25
0
25
50
75
100
125
150
1.4
TJ = 55°C
TJ = 100°C
TJ = 25°C
VGS = 10 V
15 V
VGS = 10 V
ID = 10 A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20N06HD-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |
| MTD20N06HDL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC D-PAK |
| MTD20N06HDLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
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