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参数资料
| 型号： | MTD20N06HD1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369D-01, DPAK-3 |
| 文件页数： | 9/12页 |
| 文件大小： | 121K |
| 代理商： | MTD20N06HD1 |
MTD20N06HD
http://onsemi.com
6
I S
,SOURCE
CURRENT
t, TIME
Figure 10. Reverse Recovery Time (trr)
di/dt = 300 A/
s
Standard Cell Density
High Cell Density
tb
trr
ta
trr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 s. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RθJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonlinearly with an increase of peak current in avalanche
and peak junction temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
E
AS
,SINGLE
PULSE
DRAINT
OSOURCE
A
V
ALANCHE
ENERGY
(mJ)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
25
50
75
100
125
40
60
20
10
30
150
50
0.1
1.0
100
1.0
0.1
10
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
10
s
100
s
1 ms
dc
10 ms
ID = 20 A
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20N06HD-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |
| MTD20N06HDL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC D-PAK |
| MTD20N06HDLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
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