- 您现在的位置：买卖IC网 > PDF目录98046 > MTD20N06HD1 (ON SEMICONDUCTOR) 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTD20N06HD1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369D-01, DPAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 121K |
| 代理商： | MTD20N06HD1 |
MTD20N06HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk ≥ 2.0) (Note 3)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
54
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Note 3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
7.0
4.0
Vdc
mV/
°C
Static DraintoSource OnResistance
(Cpk ≥ 2.0) (Note 3)
(VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
0.035
0.045
Ohm
DraintoSource OnVoltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
1.2
1.1
Vdc
Forward Transconductance
(VDS = 4.0 Vdc, ID = 10 Adc)
gFS
5.0
6.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
607
840
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
218
290
Transfer Capacitance
f = 1.0 MHz)
Crss
55
110
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
td(on)
9.2
18
ns
Rise Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS =10Vdc
tr
61.2
122
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
19
38
Fall Time
RG
9.1
)
tf
36
72
Gate Charge
(S
Fi
7)
QT
17
24
nC
(See Figure 7)
(VDS = 48 Vdc, ID = 20 Adc,
Q1
3.4
(VDS
48 Vdc, ID
20 Adc,
VGS = 10 Vdc)
Q2
7.75
Q3
7.46
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(Cpk ≥ 8.0) (Note 3)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.95
0.88
1.0
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
35.7
ns
(See Figure 14)
(IS = 20 Adc, VGS = 0 Vdc,
ta
24
(IS
20 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
11.7
Reverse Recovery Stored Charge
QRR
0.055
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
1
Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2
Switching characteristics are independent of operating junction temperature.
3
Reflects typical values. Cpk = Absolute Value of Spec (SpecAVG/3.516 A).
相关PDF资料 |
PDF描述 |
|---|---|
| MTD20N06HDLT4 | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HDT4 | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDLT4 | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P06HDLT4 | 20 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD2955ET4 | 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20N06HD-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |
| MTD20N06HDL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC D-PAK |
| MTD20N06HDLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
发布紧急采购，3分钟左右您将得到回复。