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参数资料
| 型号： | MTD20N06HDT4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 5/12页 |
| 文件大小： | 274K |
| 代理商： | MTD20N06HDT4 |
MTD20N06HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk ≥ 2.0) (3)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
54
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(Cpk ≥ 2.0) (3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
7.0
4.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk ≥ 2.0) (3)
(VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
—
0.035
0.045
Ohm
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
—
1.2
1.1
Vdc
Forward Transconductance
(VDS = 4.0 Vdc, ID = 10 Adc)
gFS
5.0
6.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
607
840
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
218
290
Transfer Capacitance
f = 1.0 MHz)
Crss
—
55
110
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 )
td(on)
—
9.2
18
ns
Rise Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 )
tr
—
61.2
122
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
19
38
Fall Time
G = 9.1 )
tf
—
36
72
Gate Charge
(See Figure 7)
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
QT
—
17
24
nC
(See Figure 7)
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
Q1
—
3.4
—
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
Q2
—
7.75
—
Q3
—
7.46
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(Cpk ≥ 8.0) (3)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.95
0.88
1.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
35.7
—
ns
(See Figure 14)
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
24
—
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
11.7
—
Reverse Recovery Stored Charge
QRR
—
0.055
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk = Absolute Value of Spec (Spec–AVG/3.516 A).
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