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参数资料
| 型号： | MTD20N06HDT4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/12页 |
| 文件大小： | 274K |
| 代理商： | MTD20N06HDT4 |
MTD20N06HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (Amps)
VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)
VGS, GATE–TO–SOURCE VOLTAGE (Volts)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
0
1.0
2.0
3.0
4.0
5.0
0.5
1.5
2.5
3.5
4.5
0
8
16
24
40
Figure 1. On–Region Characteristics
0
10
20
30
40
Figure 2. Transfer Characteristics
0
10
20
30
40
0.020
0.028
0.036
0.044
0.052
0.028
0.030
0.032
0.036
0.040
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
0.8
1.0
1.2
1.6
Figure 5. On–Resistance Variation with
Temperature
32
VGS = 10 V
8 V
9 V
5 V
6 V
TJ = 25°C
7 V
2
3
4
5
7
6
8
VDS ≥ 10 V
100
°C
25
°C
0.048
0.040
0.032
0.024
VGS = 10 V
– 55
°C
25
°C
0
10
20
30
40
0.038
0.034
– 50
– 25
0
25
50
75
100
125
150
1.4
TJ = – 55°C
TJ = 100°C
TJ = 25°C
VGS = 10 V
15 V
VGS = 10 V
ID = 10 A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20N06V | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20N06VT4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD20P03 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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