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| 型号： | MTP50P03HDLG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 50A TO220AB |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 25A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 4900pF @ 25V |
| 功率 - 最大： | 125W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MTP50P03HDLGOS |
MTP50P03HDL
Preferred Device
Power MOSFET
50 Amps, 30 Volts, Logic Level
P?Channel TO?220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain?to?source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
http://onsemi.com
50 AMPERES, 30 VOLTS
R DS(on) = 25 m W
against unexpected voltage transients.
P?Channel
Features
? Avalanche Energy Specified
? Source?to?Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
D
? Diode is Characterized for Use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperature
? Pb?Free Package is Available*
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Rating
Drain?Source Voltage
Drain?Gate Voltage (R GS = 1.0 M W )
Gate?Source Voltage
? Continuous
? Non?Repetitive (t p ≤ 10 ms)
Symbol
V DSS
V DGR
V GS
V GSM
Value
30
30
± 15
± 20
Unit
Vdc
Vdc
Vdc
Vpk
4
TO?220AB
4
Drain
Drain Current ? Continuous
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
I D
I D
I DM
50
31
150
Adc
Apk
CASE 221A
STYLE 5
M50P03HDLG
AYWW
Total Power Dissipation
Derate above 25 ° C
Operating and Storage Temperature Range
P D
T J , T stg
125
1.0
?55 to
150
W
W/ ° C
° C
1
2
3
1
Gate
2
3
Source
Drain
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 5.0 Vdc, Peak
I L = 50 Apk, L = 1.0 mH, R G = 25 W )
Thermal Resistance,
Junction?to?Case
Junction?to?Ambient, when mounted with
the minimum recommended pad size
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
R q JC
R q JA
T L
1250
1.0
62.5
260
mJ
° C/W
° C
M50P03HDL = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb?Free Package
ORDERING INFORMATION
Device Package Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MTP50P03HDL
MTP50P03HDLG
TO?220AB
TO?220AB
(Pb?Free)
50 Units/Rail
50 Units/Rail
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
July, 2006 ? Rev. 6
1
Publication Order Number:
MTP50P03HDL/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP50P03HDLG | 制造商:ON Semiconductor 功能描述:MOSFET P TO-220 |
| MTP50S | 制造商:NELLSEMI 制造商全称:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 50A |
| MTP50W | 制造商:NELLSEMI 制造商全称:Nell Semiconductor Co., Ltd 功能描述:Glass Passivated Triple-Phase Bridge Rectifier, 50A |
| MTP5210F3 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-Channel Enhancement Mode Power MOSFET |
| MTP52K3BPNO | 功能描述:插线板 3 1/2 UNWIRED IDC B RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48 |
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