参数资料
型号: MTP50P03HDLG
厂商: ON Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: MOSFET P-CH 30V 50A TO220AB
产品目录绘图: MOSFET TO-220, TO-220AB
标准包装: 50
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 25 毫欧 @ 25A,5V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 100nC @ 5V
输入电容 (Ciss) @ Vds: 4900pF @ 25V
功率 - 最大: 125W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: MTP50P03HDLGOS
MTP50P03HDL
TYPICAL ELECTRICAL CHARACTERISTICS
100
80
T J = 25 ° C
V GS = 10 V
8V
6V
5V
4.5 V
100
80
V DS ≥ 10 V
T J = ? 55 ° C
25 ° C
100 ° C
4V
60
60
40
20
3.5 V
3V
2.5 V
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1.5
1.9
2.3
2.7
3.1
3.5
3.9
4.3
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On?Region Characteristics
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.029
V GS = 5.0 V
0.022
T J = 25 ° C
V GS = 5 V
0.027
0.021
0.025
0.023
0.021
0.019
T J = 100 ° C
25 ° C
0.020
0.019
0.018
0.017
0.017
? 55 ° C
0.016
10 V
0.015
0
20
40
60
80
100
0.015
0
20
40
60
80
100
1.35
I D , DRAIN CURRENT (AMPS)
Figure 3. On?Resistance versus Drain Current
and Temperature
V GS = 5 V
1000
I D , DRAIN CURRENT (AMPS)
Figure 4. On?Resistance versus Drain Current
and Gate Voltage
V GS = 0 V
I D = 25 A
1.25
T J = 125 ° C
1.15
100
1.05
0.95
100 ° C
0.85
? 50
? 25
0
25
50
75
100
125
150
10
0
5
10
15
20
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Drain?To?Source Leakage
Current versus Voltage
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