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参数资料
| 型号： | MTP50P03HDLG |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 50A TO220AB |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 25A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 4900pF @ 25V |
| 功率 - 最大： | 125W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MTP50P03HDLGOS |
MTP50P03HDL
6
5
Q1
QT
Q2
V GS
30
25
1000
V DD = 30 V
V GS = 10 V
I D = 50 A
T J = 25 ° C
t r
t f
4
20
t d(off)
3
15
100
2
1
I D = 50 A
T J = 25 ° C
10
5
t d(on)
0
0
10
Q3
20
30
40
50
60
V DS
70
0
80
10
1
10
Q T , TOTAL GATE CHARGE (nC)
Figure 8. Gate?To?Source and Drain?To?Source
Voltage versus Total Charge
R G , GATE RESISTANCE (Ohms)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN?TO?SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, t rr , due
to the storage of minority carrier charge, Q RR , as shown in
the typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short t rr and low Q RR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
50
V GS = 0 V
T J = 25 ° C
40
30
20
10
0
high di/dts. The diode’s negative di/dt during t a is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during t b is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of t b /t a serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter t rr ), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V SD , SOURCE?TO?DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP50P03HDLG | 制造商:ON Semiconductor 功能描述:MOSFET P TO-220 |
| MTP50S | 制造商:NELLSEMI 制造商全称:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 50A |
| MTP50W | 制造商:NELLSEMI 制造商全称:Nell Semiconductor Co., Ltd 功能描述:Glass Passivated Triple-Phase Bridge Rectifier, 50A |
| MTP5210F3 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-Channel Enhancement Mode Power MOSFET |
| MTP52K3BPNO | 功能描述:插线板 3 1/2 UNWIRED IDC B RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48 |
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