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| 型号： | MTW32N20EG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 32A TO247 |
| 产品变化通告： | 1Q2012 Discontinuation 30/Mar/2012 |
| 产品目录绘图： | MOSFET TO-247AE |
| 标准包装： | 30 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 120nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5000pF @ 25V |
| 功率 - 最大： | 180W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MTW32N20EGOS |
MTW32N20E
Power MOSFET
32 Amps, 200 Volts
N ? Channel TO ? 247
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain ? to ? source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
http://onsemi.com
32 AMPERES, 200 VOLTS
R DS(on) = 75 m W
N ? Channel
D
? Avalanche Energy Specified
? Source ? to ? Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperature
? Isolated Mounting Hole
? This is a Pb ? Free Device*
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
G
S
MARKING DIAGRAM
AND PIN ASSIGNMENT
4 Drain
Rating
Drain ? Source Voltage
Symbol
V DSS
Value
200
Unit
Vdc
1
MTW32N20E
AYWWG
Drain ? Gate Voltage (R GS = 1.0 M W )
Gate ? Source Voltage ? Continuous
Drain Current ? Continuous
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
Total Power Dissipation
Derate above 25 ° C
V DGR
V GS
I D
I D
I DM
P D
200
± 20
32
19
128
180
1.44
Vdc
Vdc
Adc
Apk
W
W/ ° C
TO ? 247
CASE 340L
STYLE 1
1
Gate
2
Drain
3
Source
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 10 Vpk,
I L = 32 Apk, L = 1.58 mH, R G = 25 W )
T J , T stg
E AS
? 55 to 150
810
° C
mJ
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
Thermal Resistance
? Junction ? to ? Case R q JC 0.7 ° C/W
? Junction ? to ? Ambient R q JA 40
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device Package Shipping
MTW32N20EG TO ? 247 30 Units/Rail
(Pb ? Free)
? Semiconductor Components Industries, LLC, 2012
September, 2012 ? Rev. 8
1
Publication Order Number:
MTW32N20E/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTW32N25 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW32N25E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW33N10E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTW35N15E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
| MTW45N10 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
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