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| 型号： | MTW32N20EG |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 32A TO247 |
| 产品变化通告： | 1Q2012 Discontinuation 30/Mar/2012 |
| 产品目录绘图： | MOSFET TO-247AE |
| 标准包装： | 30 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 120nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5000pF @ 25V |
| 功率 - 最大： | 180W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MTW32N20EGOS |
MTW32N20E
PACKAGE DIMENSIONS
TO ? 247
CASE 340L ? 02
ISSUE F
? B ?
C
? T ?
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS INCHES
A
N
U
L
4
? Q ?
DIM
A
B
C
D
E
MIN MAX
20.32 21.08
15.75 16.26
4.70 5.30
1.00 1.40
1.90 2.60
MIN MAX
0.800 8.30
0.620 0.640
0.185 0.209
0.040 0.055
0.075 0.102
1
2
3
0.63 (0.025)
M
T B
M
F
G
1.65 2.13
5.45 BSC
0.065 0.084
0.215 BSC
K
P
? Y ?
H
J
K
L
N
1.50 2.49
0.40 0.80
19.81 20.83
5.40 6.20
4.32 5.49
0.059 0.098
0.016 0.031
0.780 0.820
0.212 0.244
0.170 0.216
P
Q
U
--- 4.50
3.55 3.65
6.15 BSC
--- 0.177
0.140 0.144
0.242 BSC
F 2 PL
W
G
D 3 PL
0.25 (0.010)
M
Y Q
J
S
H
W
STYLE 1:
PIN 1.
2.
3.
4.
2.87 3.12
GATE
DRAIN
SOURCE
DRAIN
0.113 0.123
E ? FET is a trademark of Semiconductor Components Industries, LLC (SCILLC).
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MTW32N20E/D
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| MTW32N25E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| MTW33N10E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTW35N15E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
| MTW45N10 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
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