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| 型号： | MTW32N20EG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 32A TO247 |
| 产品变化通告： | 1Q2012 Discontinuation 30/Mar/2012 |
| 产品目录绘图： | MOSFET TO-247AE |
| 标准包装： | 30 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 120nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5000pF @ 25V |
| 功率 - 最大： | 180W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MTW32N20EGOS |
MTW32N20E
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0 V, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 200 Vdc, V GS = 0)
(V DS = 200 Vdc, V GS = 0, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
200
?
?
?
?
?
247
?
?
?
?
?
250
1000
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? Source On ? Resistance (V GS = 10 Vdc, I D = 16 Adc)
Drain ? Source On ? Voltage (V GS = 10 Vdc)
(I D = 32 Adc)
(I D = 16 Adc, T J = 125 ° C)
Forward Transconductance (V DS = 15 Vdc, I D = 16 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
12
?
8.0
0.064
?
?
?
4.0
?
0.075
3.0
2.7
?
Vdc
mV/ ° C
W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
3600
5000
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0, f = 1.0 MHz)
C oss
C rss
?
?
690
130
1000
250
SWITCHING CHARACTERISTICS (Notes 1 & 2)
Turn ? On Delay Time
t d(on)
?
25
50
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 100 Vdc, I D = 32 Adc,
V GS = 10 Vdc, R G = 6.2 W )
t r
t d(off)
t f
?
?
?
120
75
91
240
150
182
Gate Charge
(V DS = 160 Vdc, I D = 32 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
85
12
40
30
120
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS (Note 1)
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 32 Adc, V GS = 0)
(I S = 16 Adc, V GS = 0, T J = 125 ° C)
(I S = 32 Adc, V GS = 0, dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.1
0.9
280
195
85
2.94
2.0
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
5.0
13
?
?
nH
nH
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
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| MTW35N15E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
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