参数资料
型号: MTW32N20EG
厂商: ON Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 200V 32A TO247
产品变化通告: 1Q2012 Discontinuation 30/Mar/2012
产品目录绘图: MOSFET TO-247AE
标准包装: 30
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 32A
开态Rds(最大)@ Id, Vgs @ 25° C: 75 毫欧 @ 16A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 120nC @ 10V
输入电容 (Ciss) @ Vds: 5000pF @ 25V
功率 - 最大: 180W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: MTW32N20EGOS
MTW32N20E
TYPICAL ELECTRICAL CHARACTERISTICS
100
80
T J = 25 ° C
V GS = 10 V
9V
8V
50
40
V DS ≥ 10 V
T J = - 55 ° C
100 ° C
25 ° C
60
40
20
7V
6V
5V
30
20
10
0
0
2
4
6
8
10
0
0
2
4
6
8
10
0.16
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.1
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.14
V GS = 10 V
T J = 100 ° C
0.09
T J = 25 ° C
0.12
0.1
0.08
0.08
0.06
25 ° C
0.07
V GS = 10 V
0.04
- 55 ° C
0.06
15 V
0.02
0
0
8
16
24
32
40
48
56
64
0.05
0
8
16
24
32
40
48
56
64
2.5
I D , DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance versus Drain Current
and Temperature
V GS = 10 V
10000
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
V GS = 0 V
2
I D = 16 A
2000
T J = 125 ° C
1000
1.5
200
100
1
20
100 ° C
25 ° C
0.5
-50
-25
0
25
50
75
100
125
150
10
0
50
100
150
200
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? To ? Source Leakage
Current versus Voltage
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