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参数资料
| 型号： | NAND08GW3B3AZB6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA63 |
| 封装： | 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63 |
| 文件页数： | 10/59页 |
| 文件大小： | 1154K |
| 代理商： | NAND08GW3B3AZB6F |
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NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
18/59
COMMAND SET
All bus write operations to the device are interpret-
ed by the Command Interface. The Commands
are input on I/O0-I/O7 and are latched on the rising
edge of Write Enable when the Command Latch
Enable signal is high. Device operations are se-
lected by writing specific commands to the Com-
mand
Register.
The
two-step
command
sequences for program and erase operations are
imposed to maximize data security.
The
Commands
are
summarized
in
Table 10. Commands
Note: 1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are not shown.
2. For consecutive read operations the 00h command does not need to be repeated.
3. Only during Cache Read busy.
Command
Bus Write Operations(1)
Commands
accepted
during busy
1st CYCLE
2nd CYCLE
3rd CYCLE
4th CYCLE
Read
00h(2)
30h
–
Random Data Output
05h
E0h
–
Cache Read
00h
31h
–
Exit Cache Read
34h
–
Yes(5)
Page Program
(Sequential Input default)
80h
10h
–
Random Data Input
85h
–
Copy Back Program
00h
35h
85h
10h
Cache Program
80h
15h
–
Block Erase
60h
D0h
–
Reset
FFh
–
Yes
Read Electronic Signature
90h
–
Read Status Register
70h
–
Yes
Read Block Lock Status
7Ah
–
Blocks Unlock
23h
24h
–
Blocks Lock
2Ah
–
Blocks Lock-Down
2Ch
–
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
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| NAND08GW3C2AE01 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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