参数资料
型号: NAND08GW3B3AZB6F
厂商: NUMONYX
元件分类: PROM
英文描述: 1G X 8 FLASH 3V PROM, 25000 ns, PBGA63
封装: 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63
文件页数: 8/59页
文件大小: 1154K
代理商: NAND08GW3B3AZB6F
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
16/59
Table 6. Address Insertion, x8 Devices
Note: 1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2Gb, 4Gb and 8Gb devices. A28 is for 2Gb devices, A29-A28 are for 4Gb devices and A30-A28 for 8Gb
devices only.
Table 7. Address Insertion, x16 Devices
Note: 1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2Gb, 4Gb and 8Gb devices. A27 is for 2Gb devices, A28-A27 are for 4Gb devices and A29-A27 for 8Gb
devices.
Bus Cycle
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
A7
A6
A5
A4
A3
A2
A1
A0
2nd
VIL
A11
A10
A9
A8
3rd
A19
A18
A17
A16
A15
A14
A13
A12
4th
A27
A26
A25
A24
A23
A22
A21
A20
5th(2)
VIL
A30
A29
A28
Bus
Cycle
I/O8-
I/O15
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
X
A7
A6
A5
A4
A3
A2
A1
A0
2nd
X
VIL
A10
A9
A8
3rd
X
A18
A17
A16
A15
A14
A13
A12
A11
4th
X
A26
A25
A24
A23
A22
A21
A20
A19
5th(2)
X
VIL
A29
A28
A27
相关PDF资料
PDF描述
NAND08GW3B3AZB6 1G X 8 FLASH 3V PROM, 25000 ns, PBGA63
NAND256R3A1BN1F 32M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND256R3A3BZA6F 32M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63
NAND256R3A3CN1E 32M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND256R4A1DN1E 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
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