参数资料
型号: NAND08GW3B3AZB6F
厂商: NUMONYX
元件分类: PROM
英文描述: 1G X 8 FLASH 3V PROM, 25000 ns, PBGA63
封装: 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63
文件页数: 9/59页
文件大小: 1154K
代理商: NAND08GW3B3AZB6F
17/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Table 8. Address Definitions, x8
Table 9. Address Definitions, x16
Address
Definition
A0 - A11
Column Address
A12 - A17
Page Address
A18 - A26
Block Address
512Mb device
A18 - A27
Block Address
1Gb device
A18 - A28
Block Address
2Gb device
A18 - A29
Block Address
4Gb device
A18 - A30
Block Address
8Gb device
Address
Definition
A0 - A10
Column Address
A11 - A16
Page Address
A17 - A25
Block Address
512Mb device
A17 - A26
Block Address
1Gb device
A17 - A27
Block Address
2Gb device
A17 - A28
Block Address
4Gb device
A17 - A29
Block Address
8Gb device
相关PDF资料
PDF描述
NAND08GW3B3AZB6 1G X 8 FLASH 3V PROM, 25000 ns, PBGA63
NAND256R3A1BN1F 32M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND256R3A3BZA6F 32M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63
NAND256R3A3CN1E 32M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND256R4A1DN1E 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
相关代理商/技术参数
参数描述
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NAND08GW3B4BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B4CN1F 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3C2AE01 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel